2nd-Generation Z-FET®
25-mΩ, 1200-V, SiC MOSFET


  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Easy to parallel and simple to drive
  • Resistant to latch-up
  • Avalanche ruggedness

pdf "Cree Gen2 MOSFET in 10kW Boost converter for PV inverter and EV applications"

Package TO-247-3
Blocking Voltage 1200 V
Current Rating 60 A
RDS (on) 25 mΩ
Gate charge total 161 nC
Total Switching Energy Loss 1.7 mJ
Maximum junction temperature 150 °C
Lead-frame materials 100% matte, tin solder finish over a copper lead frame

Related Documents

Data Sheets Version Last Updated
Rev A 04 Nov 2014
MOSFET Product Ecology Version Last Updated
REACh and RoHS Declarations
- 01 Apr 2015
REACh Declaration
RE3003022015 01 May 2015
RoHS Declaration
RS3003012015 01 Jun 2015
Power Application Notes Version Last Updated
A 13 Feb 2015
[Design only; boards no longer available]
Sales Terms Version Last Updated