Revolutionizing the Power Electronics Industry
Our SiC devices deliver the best possible system efficiencies while simplifying thermal design.
Find out how you can use our power devices to re-invent and revolutionize the power industry.
Our RF Devices are Driving High-Power Communications
We are a leading supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices for RF communications.
When you need best-in-class performance, look to our GaN HEMTs and MMICs.
RF Components Home
Download an Excel file listing Wolfspeed's RF devices.
June 19, 2012
New Models Drive Faster Time to Market and Provide Rapid Simulation of Complex Waveforms such as W-CDMA and OFDMA
May 29, 2014
No-Compromise Transistors Deliver Breakthrough Price-Performance and Include the Industry’s First 300W, 2.7 GHz Plastic Packaged GaN Telecom Transistor
May 14, 2014
Smaller RF Transistors are Ideal Replacements for GaAs IMFETs and Commercial Tubes in Amplifiers with Power Levels up to 100W Continuous Wave and Operating Frequencies up to 10 GHz
May 7, 2014
October 11, 2015 - October 14, 2015
Locations: New Orleans, Louisiana Exhibiting
November 30, 2015 - December 3, 2015
Locations: Phoenix, Arizona Exhibiting
May 22, 2016 - May 27, 2016
Locations: San Francisco, California Exhibiting