120-W, 2300 – 2700-MHz, GaN HEMT
for WiMAX and LTE

Wolfspeed’s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.


  • High Degree of DPD Correction Can be Applied
Operating Voltage 28 V
Peak Output Power 120 W
Frequency 2.3 - 2.7 GHz
Package Type Flange
Gain 13 dB
ACLR -32 dBc @ 20 W PAVE
Efficiency 30 % @ 20 W PAVE


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