30-W, 28-V, GaN HEMT
for Linear Communications ranging from VHF to 3 GHz

Wolfspeed’s CGH27030 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down flange and solder-down pill packages.


  • WiMAX Fixed Access 802.16-2004 OFDM
  • WiMAX Mobile Access 802.16e OFDMA
Operating Voltage 28 V
Peak Output Power 30 W
Package Type Flange/Pill
Frequency VHF - 3.0 GHz
Small Signal Gain 15 dB
Average Power (PAVE) 4.0 W @ < 2.0% EVM
Drain Efficiency 28 % @ 4 W PAVE


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This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
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Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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