30-W, 3300 – 3900-MHz, 28-V, GaN HEMT
for WiMAX

Wolfspeed’s CGH35030F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35030F ideal for 3.3 – 3.9-GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.


  • WiMAX Fixed Access 802.16-2004 OFDM
  • WiMAX Mobile Access 802.16e OFDMA
Operating Voltage 28 V
Peak Output Power 30 W
Frequency 3.3 - 3.9 GHz
Package Type Flange
Small Signal Gain 12 dB
Average Power (PAVE) 4.0 W @ < 2.0% EVM
Drain Efficiency 25 % @ 4 W PAVE


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by Raymond S. Pengelly, William Pribble, Thomas Smith

This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Design 12 Dec 2014
by Marco J. Pelk, W. C. Edmund Neo, John R. Gajadharsing, Raymond S. Pengelly, Leo C. N. de Vreede

A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented.
Design 15 May 2008
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Reinel Marante, M. Nieves Ruiz, Leysi Rizo, Lorena Cabria, José A. García

In this paper, the design of a class E2 resonant DC/DC converter, operating at UHF band, is proposed. Combining the use of GaN HEMT devices, both for the inverter and the synchronous rectifier, with high Q lumped-element multi-harmonic matching networks, a peak efficiency value of 72% has been obtained at 780 MHz with a 10.3 W output power.
Design 01 Jun 2012
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by José A. García, Reinel Marante, María N. Ruiz

In this paper, the design and performance of class E2 resonant topologies for DC/DC power conversion at Ultra High Frequencies (UHF) are considered. Combining the use of RF GaN HEMT devices, both for the inverter and the synchronous rectifier, with high Q lumped-element terminating networks, peak efficiency values over 70% may be obtained.

Control strategies based on carrier bursting, switching frequency modulation, or outphasing are also shown to be feasible. Taking advantage of their improved dynamic response, when compared to low frequency more traditional switched-mode converters, a class E3 polar transmitter for the EDGE standard has been designed and tested at 770 MHz, offering an average global efficiency over 46% at 4.3 W of output power, through RF-based amplitude and phase constituting branches.
design 01 Dec 2012
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009