200-W, 1800 – 2200-MHz, GaN HEMT for LTE

Wolfspeed’s CGHV22200 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV22200 ideal for 1.8 – 2.2-GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages.


  • High degree of DPD correction can be applied
Frequency 1.8 - 2.2 GHz
Gain 18 dB
ACLR -35 dBc @ 50 W PAVE
Efficiency 31 - 35 % @ 50 W PAVE
Package Type Flange/Pill
Operating Voltage 50 V
Peak Output Power 200 W


Related Documents

Data Sheets Version Last Updated
0.2 15 Jan 2014
Data Sheets 产品 Version Last Updated
0.2 15 Jan 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
C 30 Apr 2012
A 30 Apr 2012
RF Product Ecology Version Last Updated
RS4001082013 27 Oct 2014
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, William Pribble, Thomas Smith

This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Design 12 Dec 2014