25-W, 2.5 – 6.0-GHz, GaN MMIC Power Amplifier

Wolfspeed’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Operating Voltage 28 V
Peak Output Power 25 W
Frequency 2.5 - 6.0 GHz
Package Type Die
Small Signal Gain 24 dB
Typical Power (PSAT) 25 W
Breakdown Voltage High
Temperature Operation High
Size 0.180 x 0.145 x 0.004 in


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Data Sheets Version Last Updated
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Data Sheets 产品 Version Last Updated
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A 30 Apr 2012
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by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012