120-W RF Power GaN HEMT

Wolfspeed’s CGH40120F is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40120F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package.


  • Up to 2.5 GHz Operation
Operating Voltage 28 V
Peak Output Power 120 W
Frequency DC - 3.0 GHz
Package Type Flange
Small Signal Gain 20 dB 1.0 GHz
15 dB @ 2.0 GHz
Typical Power (PSAT) 120 W
Efficiency 70 % @ PSAT


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