2-W, 20-MHz – 6000-MHz, GaN MMIC Power Amplifier

Wolfspeed’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink.

Operating Voltage 28 V
Peak Output Power 2 W
Frequency DC - 6.0 GHz
Package Type Flange
Small Signal Gain 17 dB
Typical Power (PSAT) 3 W
Breakdown Voltage High
Temperature Operation High
Size 0.5 x 0.5 in


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by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
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