150-W, 2900 – 3500-MHz, 50-V, GaN HEMT for S-Band Radar Systems

Wolfspeed’s CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.


  • Rated power = 150 W @ TCASE = 85°C
  • Transient 100 μsec – 300 μsec @ 20% duty cycle
Peak Output Power 150 W
Frequency 2.9 - 3.5 GHz
Power Gain 13.5 dB @ TCase = 85°C
Drain Efficiency 50 @ TCase = 85°C
Internal Matching Input matched
Pulsed Amplitude Droop 0.3 dB Maximum
Package Type Flange/Pill
Operating Voltage 50 V


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This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
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