25-W, 5.5 - 8.5-GHz, GaN MMIC Power Amplifier

Wolfspeed’s CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.

Small Signal Gain 25 dB
Typical Power (PSAT) 35 W
Operating Voltage 28 V
Breakdown Voltage High
Temperature Operation High
Size 1.00 x 0.385 in
Peak Output Power 25 W
Frequency 5.5 - 8.5 GHz
Package Type Flange


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by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012