Revolutionizing the Power Electronics Industry
Our SiC devices deliver the best possible system efficiencies while simplifying thermal design.
Find out how you can use our power devices to re-invent and revolutionize the power industry.
Our RF Devices are Driving High-Power Communications
We are a leading supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices for RF communications.
When you need best-in-class performance, look to our GaN HEMTs and MMICs.
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US Toll Free: 866-924-3645
Outside the US: +1-919-287-7888
Cree Research Triangle Park Technology Center Cree, Inc.
3028 E Cornwallis Road
Research Triangle Park, North Carolina 27709
Tel: +1 919-313-5300
Fax: +1 919-313-5696
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June 14, 2012
Higher Power GaN-on-SiC Processes Allow Telecom System Operators and Military System Providers to Leverage GaN Efficiency for Operational Cost Savings
June 19, 2012
New Models Drive Faster Time to Market and Provide Rapid Simulation of Complex Waveforms such as W-CDMA and OFDMA
June 13, 2012
Joint Workshop Planned for June 20 at 2012 International Microwave Symposium in Montreal to Demonstrate MMIC Design Process Using the New PDK