Wolfspeed continues to lead in silicon carbide (SiC) with our first Industrial Gen 3 1700 V Bare Die SiC MOSFETs. The product is fully industrial qualified, with high blocking voltage (1700 V) with the industry-leading low R_DS(ON) over temperature stability, enabling low conduction losses and highest figures of merit in the most demanding applications. These devices are optimized for use in high power applications such as locomotive traction, solid state circuit breakers, solar power, uninterruptible power supply, and more. Based on the latest 3rd generation technology, Wolfspeed’s 1700 V Bare Die Silicon Carbide MOSFETs include a range of on-resistance and package options that enable designers to select the right part for their application. The 1700 V MOSFETs are designed for low R_DS(ON), are easy to parallel and compatible with standard gate drive design. The efficiency gained by moving from a silicon-based solution to Silicon Carbide can help reduce system size, weight, and cooling requirements. Back side metallization provides better solution to module designers in choice of assembly process and module layout.