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Blocking Voltage 900 V
Current Rating at 25°C 196 A
Rds(on) at 25°C 10 mΩ
Package Bare Die
Gate charge total 68 nC
Reverse-Recovery Charge (Qrr) 1700 nC
Output Capacitance 350 pF
Reverse-Recover Time (Trr) 32 ns

Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: CPM3-0900-0010A


Wolfspeed introduces its latest C3MTM SiC MOSFET technology in die form. This new device achieves a remarkable 10mΩ Rds(on) and is capable of 900V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. C3M MOSFET die can be configured in parallel to achieve higher current handling capability or can be connected in series to achieve higher blocking capability. Unlike silicon MOSFETs, Wolfspeed C3M SiC MOSFETs include a fast intrinsic diode with low reverse recovery (Qrr) – eliminating the need for external anti-parallel diodes.  Unlike silicon IGBTs, they include avalanche capability and enable operation at higher switching frequencies, which shrinks the size of the resonant tank elements and decreases overall size, weight, and cost of the system.  

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Features

• Minimum of 900V Vbr across entire operating temperature range (Reduce or eliminate derating)
• High-speed switching with low output capacitance
• High blocking voltage with low RDS(on)
• Avalanche ruggedness
• Fast intrinsic diode with low reverse recovery (Qrr)
• Easy to parallel and simple to drive

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