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Wolfspeed produces GaN, AlxGa1-xN and InyGa1-yN epitaxial layers on SiC substrates. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications. Additional comments, terms and conditions may be found in the specification document.

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Nitride Epitaxial Layer Specifications – Structural
Property Value or Range Precision Measurement Technique
Substrate SiC (n-type or Semi-Insulating) - -
Composition AlxInyGa1-x-yN, 0 ≤ x ≤ 0.4,
0 ≤ y ≤ 0.2, certain restrictions apply
Δ x = ± 0.015, Δ y = ± 0.02 XRD peak splitting and PL – mid-radius
Thickness (2) 0.001 μm to 10.0 μm GaN
0.2 nm to 1.0 μm AlN
0.001 μm to 3.0 μm AlxInyGa1-x-yN
10.0 nm to 250.0 nm SiN (Cap Layer)
Average thickness within ± 15% of target thickness and uniformity <10%. (3) X-ray or white light interferometry
GaN Crystallinity < 250 arcsec (3 μm layer on SiC substrate (5)) - XRD (0006) FWHM (center point)
Al0.25Ga0.75N < 500 arcsec (3 μm layer on SiC substrate (5)) - XRD (0006) FWHM (center point) (4)
Visible Defects < 50 / cm2 - Differential interference microscopy at 50x in cross pattern with 5 mm edge exclusion
Dislocation Density <1E9 / cm2, total - X-ray / AFM
Wafer Shape Warp ≤ 45 microns for 3”, ≤ 55 microns for 100 mm <2 microns Non-contact optical inspection

Nitride Epitaxial Layer Specifications – Electrical

Property Value or Range Precision Measurement Technique
Dopant type n-type (Si)
p-type (Mg)
- -
Carrier concentration (undoped, substrate dependent) < 1E16 cm-3, n-type - Hg probe CV
Carrier concentration (n-type, Si doped) 1E16 to 2E19 cm-3 ± 50% Hg probe CV (wafer center, room temperature)
Carrier concentration (p-type, Mg doped) 5E16 to 5E17 cm-3 (activated) ± 50% Hg probe CV (wafer center, room temperature)
Carrier Concentration of HEMT structure >8E12 cm2 (25% Al / 25 nm AlGaN) - Contactless non-destructive carrier concentration
Mobility of HEMT structure μAlGaN ≥ 1600 cm2 V-1 s-1 (25.0% Al / 25.0 nm AlGaN) - Contactless non-destructive mobility
Sheet resistivity < 5% uniformity - Contactless non-destructive sheet resistivity
  1. Certain additional restrictions may apply and will be presented on the product quotation.
  2. Range given for undoped layers. Maximum achievable thickness for doped layers or heterostructures will be reduced.
  3. Precision specification applies only to layers ≥ 0.01 μm thick. Uniformity = (100 x standard deviation / mean).