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Wolfspeed produces N-type and P-type SiC epitaxial layers on SiC substrates, and has the widest range of available layer thickness from sub-micron to >200µm Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications. Additional comments, terms and conditions may be found in the specification document.

Download Spec Sheet

Substrate Orientation: SiC Epitaxy is available only for off-axis substrates

Conductivity n-type p-type
Dopant Nitrogen Aluminum
Net doping density ND-NA NA-ND
Silicon face 9E14 – 1E19/cm3 9E14 – 1E19/cm3
Carbon face 1E16 – 1E19/cm3 Not Available
Tolerance ±25% ±50%
Thickness range – carbon face
0.2–50.0 microns ±10% of selected thickness ±10% of selected thickness
Thickness range – carbon face
0.2–1.0 microns ±25% of selected thickness Not available
1.0–10.0 microns ±15% of selected thickness Not available

Notes:

  • 2 mm edge exclusion for 76.2 mm, 3 mm edge exclusion for 100.0 and 150.0 mm
  • N-type epi layers <20 microns are preceded by n-type, 1E18, 0.5 micron buffer layer
  • N-type epi layers ≥20 microns are preceded by n-type, 1E18, 1.0 micron buffer layer
  • No buffer layer for p-type epitaxial layers
  • Not all doping densities are available in all thicknesses
  • Contact Wolfspeed Materials Sales for specifications on multi-layer or unique epitaxy requests