Wolfspeed Introduces New SiC MOSFET for EV Drive Trains1/10/2017
Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 900V, 10mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25°C. This device enables the reduction of EV drive-train inverter losses by 78 percent based on EPA combined city/highway mileage standards. This efficiency improvement offers designers new options in terms of range, battery usage and vehicle design.
Recently Wolfspeed supplied Ford Motor Company—in a collaboration with the U.S. DoE―with a full-SiC, 400A power module designed around the 900V, 10mΩ chip. The module, designed and produced by Wolfspeed, contains four MOSFETs connected in parallel to achieved a remarkable 2.5mΩ Rds(on). Wolfspeed engineers have since demonstrated the capability to use these chips to create an 800A, 1.25mΩ module.
“With the commercial release of the 900V 10mΩ device, electric vehicles can now reap the benefits of SiC in all aspects of their power conversion,” said John Palmour, CTO of Wolfspeed. “With the continued expansion of our Gen3 MOSFET portfolio in new package options, our devices can now support significant efficiency improvements in onboard chargers, offboard chargers, and now EV drive trains.
Commercially qualified and rated for a maximum operating temperature of 175˚C, Wolfspeed’s new chip offers high-reliability in harsh environments, like those found in vehicle drive-trains.
The new 900V, 10mΩ MOSFET is available in bare die, is listed as part number CPM3-0900-0010A, and is currently available for purchase from SemiDice. Wolfspeed expects to release the associated discrete device in a 4L-TO247 package (C3M0010090K) in the coming weeks. This package has a Kelvin-source connection that allows engineers to create designs that maximize the benefits of SiC’s superior speed and efficiency.
For more complete technical information about Wolfspeed’s new 900V, 10mΩ MOSFET, access its part page here.
Wolfspeed, A Cree Company, is leading the innovation and commercialization of silicon carbide and gallium nitride, liberating designers to invent power and wireless systems for a responsible, energy-efficient future.
Wolfspeed’s wide bandgap semiconductor products for power and radio-frequency (RF) applications deliver new levels of performance through increased efficiency, higher switching frequency and reduced system size and weight for the transportation, industrial, energy and communications markets.
Cree is a market-leading innovator of lighting-class LEDs, lighting products and semiconductor products for power and radio frequency (RF) applications. Cree believes in better light experiences and is delivering new innovative LED technology that transforms the way people experience light through high-quality interior and exterior LED lighting solutions.
Cree’s product families include LED lighting systems and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree’s products are driving improvements in applications such as general illumination, electronic signs and signals, power supplies and inverters.
This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including the risk that we may be unable to manufacture these new products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the risk we may encounter delays or other difficulties in ramping up production of our new products; customer acceptance of our new products; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 26, 2016, and subsequent filings.
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