Revolutionizing the Power Electronics Industry
Our SiC devices deliver the best possible system efficiencies while simplifying thermal design.
Find out how you can use our power devices to re-invent and revolutionize the power industry.
Our RF Devices are Driving High-Power Communications
We are a leading supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices for RF communications.
When you need best-in-class performance, look to our GaN HEMTs and MMICs.
RF Components Home
Find a distributor to assist you with RF products.
Wolfspeed RF products use GaN on silicon-carbide substrates, which provides many inherent advantages over silicon substrates — advantages that can significantly benefit our customers.
October 11, 2015 - October 14, 2015
Locations: New Orleans, Louisiana Exhibiting
October 26, 2015 - October 28, 2015
Locations: Tampa, Florida Exhibiting
November 30, 2015 - December 3, 2015
Locations: Phoenix, Arizona Exhibiting
March 14, 2016 - March 17, 2016
Locations: Orlando, Florida Exhibiting
May 22, 2016 - May 27, 2016
Locations: San Francisco, California Exhibiting
October 1, 2014
May 29, 2014
No-Compromise Transistors Deliver Breakthrough Price-Performance and Include the Industry’s First 300W, 2.7 GHz Plastic Packaged GaN Telecom Transistor
May 14, 2014
Smaller RF Transistors are Ideal Replacements for GaAs IMFETs and Commercial Tubes in Amplifiers with Power Levels up to 100W Continuous Wave and Operating Frequencies up to 10 GHz
May 7, 2014
May 14, 2015