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Module Size 106 x 62 x 30 mm
Configuration Half-bridge
Blocking Voltage 1200 V
Current Rating 300 A
Rds(on) at 25°C 4.2 mΩ
Package 62mm
Maximum junction temperature 150 °C
Total Capacitive Charge (QC(typ)) 3.2 µC (Tj = 150°C)
Switching Energy ESW 12 mJ (Tj = 150°C)

1200-V, 300-A, Silicon Carbide, 62-mm, Half-Bridge Module HV-H3TRB Module

SKU: WAS300M12BM2


• Simultaneous high temperature, high humidity, high voltage operation
• Ultra-low loss
• High-efficiency operation
• Zero reverse-recovery current from diode
• Zero turn-off tail current from MOSFET
• Normally-off, fail-safe device operation
• Ease of paralleling
• Copper baseplate and aluminum nitride insulator

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