Mail Icon postage letter Location Marker standard map marker Pencil Icon pencil Power Icon Lightning Bolt Radio Frequency Icon Radio Tower Radio Frequency Icon antenna Search Icon magnifying glass Outgoing Call Phone with arrow pointing out Incoming Call Phone with arrow pointing in Next Arrows 2 forward facing arrows Down Arrow Downward pointing arrow Download File tray with arrow pointing in Pencil pencil Document document Info info Power circle icon lightning bolt with circle around it RF Components circle icon antenna with circle around it Wolfspeed circle icon wolfspeed logo with circle around it Wolfspeed wolf icon wolfspeed logo Marker Icon with Circle map marker with circle Page Icon with Circle page marker with circle Gear Icon with Circle gear marker with circle Page Icon with Circle page marker with circle Play Button Triangle on top of circle Large Right Arrow Circle

Why Wolfspeed?

Wolfspeed didn't become the leader in wide bandgap semiconductors overnight.

Our parent company, Cree, Inc., spent 28 years establishing a global brand known for innovation, financial strength and reliable materials sourcing, staffed by the most forward-looking thinkers and doers in any scientific enterprise.

Wolfspeed was born ready, and we’re outpacing the competition in every meaningful performance and cost-benefit parameter to provide RF and Power devices to any industry that needs the fastest, smallest, lightest and most efficient semiconductor products available. Which is all of them.

We're starting out front and leading the pack.

How do leaders lead? By being first.

How do leaders lead? By being first.
  • 1987
  • Cree founded
  • 1991
  • Released world’s first commercial SiC wafers
  • 1998
  • Created industry's first GaN HEMT on SiC, with record power density
  • 1999
  • Demonstrated 4-inch SiC wafer
  • 2000
  • Demonstrated industry's first GaN HEMT MMIC, grown on semi-insulating SiC substrate
  • 2002
  • Released our first 600V commercial SiC JBS Schottky diode
  • 2006
  • Released industry's first 1200V SiC Schottky diode
  • 2007
  • Commercial release of 100-mm, zero-micropipe SiC substrates
  • 2008
  • Announced sample release of 90W GaN HEMT
  • 2009
  • Demonstrated record-efficiency GaN HEMT Dohetry amplifier with digital pre-distortion
  • 2010
  • Released industry's first 1700V SiC Schottky diodes
  • Developed high-quality 150-mm SiC substrates
  • 2011
  • Released industry's first SiC MOSFET
  • 2012
  • Introduced our first 1200V SiC half-bridge module
  • 2014
  • Introduced industry's first 1200V SiC 25mΩ MOSFET
  • Introduced industry's first 1700V SiC half-bridge module
  • Became Department of Defense Trusted GaN Foundry
  • 2015
  • Acquired APEI
  • Introduced industry's first 900V SiC MOSFET
  • Exceeded two trillion field hours with power products
  • Demonstrated 200-mm SiC wafer
  • 2016
  • Industry’s first 1000V MOSFET
  • Introduced Highest Power Part on the Market in L-band Radar
  • Released market’s highest-power, single-ended transistor for L-Band Radar
  • 2017
  • Introduced SiC 900V, 10mΩ MOSFET for EV Drive Trains enabling reduction of EV drive train inverter losses by 78%
  • Introduced SiC 1200V, 75mΩ MOSFET with industry’s lowest figure of merit
  • 1987

    Cree founded

  • 1991

    Released world’s first commercial SiC wafers

  • 1998

    Created industry's first GaN HEMT on SiC, with record power density

  • 1999

    Demonstrated 4-inch SiC wafer

  • 2000

    Demonstrated industry's first GaN HEMT MMIC, grown on semi-insulating SiC substrate

  • 2002

    Released our first 600V commercial SiC JBS Schottky diode

  • 2006

    Released industry's first 1200V SiC Schottky diode

  • 2007

    Commercial release of 100-mm, zero-micropipe SiC substrates

  • 2008

    Announced sample release of 90W GaN HEMT

  • 2009

    Demonstrated record-efficiency GaN HEMT Dohetry amplifier with digital pre-distortion

  • 2010

    Released industry's first 1700V SiC Schottky diodes

  • 2010

    Developed high-quality 150-mm SiC substrates

  • 2011

    Released industry's first SiC MOSFET

  • 2012

    Introduced our first 1200V SiC half-bridge module

  • 2014

    Introduced industry's first 1200V SiC 25mΩ MOSFET

  • 2014

    Introduced industry's first 1700V SiC half-bridge module

  • 2014

    Became Department of Defense Trusted GaN Foundry

  • 2015

    Acquired APEI

  • 2015

    Introduced industry's first 900V SiC MOSFET

  • 2015

    Exceeded two trillion field hours with power products

  • 2015

    Demonstrated 200-mm SiC wafer

  • 2016

    Industry’s first 1000V MOSFET

  • 2016

    Introduced Highest Power Part on the Market in L-band Radar

  • 2016

    Released market’s highest-power, single-ended transistor for L-Band Radar

  • 2017

    Introduced SiC 900V, 10mΩ MOSFET for EV Drive Trains enabling reduction of EV drive train inverter losses by 78%

  • 2017

    Introduced SiC 1200V, 75mΩ MOSFET with industry’s lowest figure of merit

  • 1987
  • 1989
  • 1991
  • 1993
  • 1995
  • 1997
  • 1999
  • 2001
  • 2003
  • 2005
  • 2007
  • 2009
  • 2011
  • 2013
  • 2015
  • 2017
  • 1988
  • 1990
  • 1992
  • 1994
  • 1996
  • 1998
  • 2000
  • 2002
  • 2004
  • 2006
  • 2008
  • 2010
  • 2012
  • 2014
  • 2016

SiC and GaN take on the world. Everyone wins.

No incumbent technology stands a chance against the efficiency, reliability and performance of silicon carbide.

1.09 .55 Silicon SiliconCarbide

100% less Si means 50% less switching loss.

Replace a Si diode with a SiC Schottky diode in a hard-switched IGBT application and switching losses in the diode are slashed by 80%, while switching losses in the IGBT drop 50%. Whatever you’re using, you can’t switch fast enough.
View Source >

Group 3dB - 6dB higher gain GaAs GaN

Not just better. Multiples better.

A semiconductor made with gallium nitride delivers higher gain by a multiple of 3db to 6db in C, X or Ku band than GaAs device. Aim higher. Aim Wolfspeed.

In Wolfspeed we trust.

What Cree pioneered, Wolfspeed perfects. More and more industries are leveraging the industry-leading performance of Wolfspeed SiC and GaN as they develop next-generation applications and devices for RF and Power. We know because we’re keeping count.

170600000000+

hours on the job. Not bad for a "new" company.

The Wolfspeed RF product portfolio has rocketed past 170 billion hours of end-consumer usage as designers embrace the advanced capability of GaN technology. It’s a number that’s increasing with great frequency.

4400000000000+

hours in the field. And counting.

Meanwhile, SiC has powered Wolfspeed’s MOSFETs, Schottky diodes and power modules past four trillion hours of 650V - 1700 V end-customer usage worldwide. Absolute power inspires absolutely.

Gee, thanks.

Wide Bandgap Automotive Traction Inverter, Featuring CAS325M12HM2


2016 R&D 100 Award, IT/Electrical

2016 R&D 100 Award logo

CAS325M12HM2 high performance, 1200V, 325A, 62mm SiC half-bridge module


2016 ECN Impact Award, Passive Components and Discrete Semiconductors category

2016 ECN Impact Award logo

150-mm 4HN Silicon Carbide Epitaxial Wafers


2013 CS Industry Award, Substrates & Materials,
150-mm 4HN Silicon Carbide Epitaxial Wafers

2013 CS Industry Award logo

50A Silicon Carbide


2013 CS Industry Award Shortlist, Device Design & Packaging
50A Silicon Carbide

2013 CS Industry Award Shortlist logo

50V GaN HEMT


2013 CS Industry Award R&D Award,
50v GAN HEMT

2013 CS Industry Award  R&D Award logo

SiC Six-Pack Power Module - CCS050M12CM2


2013 Electronic Products, Product of the Year Award,
SiC Six-Pack Power Module - CCS050M12CM2

2013 Electronic Products, Product of the Year Award logo

SiC Six-Pack Power Module - CCS050M12CM2


2014 Compound Semiconductor Industry Award, Device Design & Packaging,
SiC Six-Pack Power Module - CCS050M12CM2

2014 Compound Semiconductor Industry Award

1200V SiC MOSFET - C2M0025120D


2014 EDN Hot 100 Products of 2014, Components,
1200V SiC MOSFET - C2M0025120D

2014 EDN Hot 100 Products of 2014 logo

1.2kV Half-Bridge Power Module - C2M0025120D


2014 Electronic Product Design & Test e-Legacy Award, Energy,
1.2kV Half-Bridge Power Module - C2M0025120D

2014 Electronic Product Design & Test e-Legacy Award logo

High-Performance Silicon Carbide-based Plug-In Hybrid Electric Vehicle Battery Charger (Collaboration with APEI)


2014 R&D 100 Award, Energy,
High-Performance Silicon Carbide-based Plug-In Hybrid Electric Vehicle Battery Charger

2014 R&D 100 Award logo

1200V SiC MOSFET - C2M0025120D


2015 Compound Semiconductor Industry Award, Device Design & Packaging,
High-Performance Silicon Carbide-based Plug-In Hybrid Electric Vehicle Battery Charger

2015 Compound Semiconductor Industry Award logo