- Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
- Zero Reverse Recovery Current / Forward Recovery Voltage
- Temperature-Independent Switching Behavior
- Low Profile Package with Low Inductance
Wolfspeed’s 1700 V Discrete Silicon Carbide (SiC) Schottky Diodes meet higher efficiency standards than standard silicon based solutions, while reaching higher frequencies and power densities. Silicon Carbide Schottky diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of Silicon Carbide products, these diodes are able to provide lower overall system costs in a variety of diverse applications.
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Recommended For New Design?
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs