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Module Size 110 x 65 x 10 mm
Configuration Half Bridge
Blocking Voltage 1200 V
Current Rating 325 A
RDS(ON) at 25°C 3.7 mΩ
Package High Performance 62 mm
Maximum junction temperature 175 °C
Total Capacitive Charge (QC (typ)) 4.3 μC
Switching Energy ESW 9.3 mJ

1200V, 325A, Silicon Carbide High-Performance 62 mm Half-Bridge Module



  • Ultra-low loss, low inductance
  • High-efficiency operation
  • High-frequency, ultra-fast switching operation
  • Zero reverse-recovery current from diode
  • Zero turn-off tail current from MOSFET
  • Normally-off, fail-safe device operation
  • Ease of paralleling
  • AlSiC baseplate and Si3N4 AMB insulator, enhancing ruggedness with respect to thermal cycling

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