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Licensing Cree's GaN power device patents

Cree’s GaN power technology is available for licensing. A list of patents that may contain claims that are included in the program are listed below; corresponding foreign counterparts are also included. Contact Cree at licensing@cree.com for further information.

US Patent Number Issue Date Full Title

6,316,793

November 13, 2001

Nitride based transistors on semi-insulating silicon carbide substrates

6,475,889

November 5, 2002

Method of forming vias in silicon carbide and resulting devices and circuits

6,486,502

November 26, 2002

Nitride based transistors on semi-insulating silicon carbide substrates

6,515,303

February 4, 2003

Method of forming vias in silicon carbide and resulting devices and circuits

6,548,333

April 25, 2003

Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment

6,586,781

July 1, 2003

Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same 

6,649,497

November 18, 2003

Method of forming vias in silicon carbide and resulting devices and circuits

6,727,531

April 27, 2004

Indium gallium nitride channel high electron mobility transistors, and method of making the same 

6,777,278

August 17, 2004

Methods of fabricating aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment

6,849,882

February 1, 2005

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

6,946,739

September 20, 2005

Method of forming vias in silicon carbide and resulting devices and circuits

6,982,204

January 3, 2006

Nitride based transistors and methods of fabrication thereof using non-etched contact recesses

7,030,428

April 18, 2006

Strain balanced nitride heterojunction transistors

7,045,404

May 16, 2006

Nitride based transistors with a protective layer and a low-damage recess and methods of fabrication thereof

7,125,786

October 24, 2006

Method of forming vias in silicon carbide and resulting devices and circuits

7,170,111

January 30, 2007

Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same

7,230,284

June 12, 2007

Insulating gate AlGaN/GaN HEMT

7,238,560

July 3, 2007

Methods of fabricating nitride-based transistors with a cap layer and a recessed gate

7,253,454

August 7, 2007

High electron mobility transistor 

7,265,399

September 4, 2007

Asymmetric layout structures for transistors and methods of fabricating the same

7,326,971

February 5, 2008

Gallium nitride based high-electron mobility devices

7,332,795

February 19, 2008

Dielectric passivation for semiconductor devices

7,364,988

April 29. 2008

Method of manufacturing gallium nitride based high-electron mobility devices 

7,419,892

September 2, 2008

Semiconductor devices including implanted regions and protective layers and methods of forming the same

7,432,142

October 7, 2008

Methods of fabricating nitride based transistors having regrown ohmic contact regions 

7,456,443

November 25, 2008

Transistors having buried n-type and p-type regions beneath the source region

7,465,967

December 16, 2008

Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions

7,501,669

March 10, 2009

Wide bandgap transistor devices with field plates

7,544,963

June 9, 2009

Binary group-III nitride based high electron mobility transistors

7,550,783

June 23, 2009

Wide bandgap HEMTs with source connected field plates 

7,550,784

June 23, 2009

Nitride based transistors and methods of fabrication thereof using non-etched contact recesses

7,573,078

August 11, 2009

Wide bandgap transistors with multiple field plates

7,592,211

September 22, 2009

Passivation of wide bandgap based semiconductor devices with hydrogen-free sputtered nitrides 

7,612,390

November 3, 2009

Heterojunction transistors including energy barriers

7,615,774

November 10, 2009

Aluminum free group-III nitride based high electron mobility transistors

7,638,818

December 28, 2009

Robust transistors with fluorine treatment 

7,678,628

March 16, 2010

Methods of fabricating nitride-based transistors with a cap layer and a recessed gate

7,692,263

April 6, 2010

High voltage GaN transistors

7,709,269

May 4, 2010

Transistors including supported gate electrodes 

7,709,859

May 4, 2010

Cap layers including aluminum nitride for nitride-based transistors

7,745,851

June 29, 2010

Polytype hetero-interface high electron mobility device and method of making

7,812,369

October 12, 2010

Fabrication of single or multiple gate field plates

7,855,401

December 21, 2010

Passivation of wide bandgap based semiconductor devices with hydrogen-free sputtered nitrides

7,875,537

January 25, 2011

High temperature ion implantation of nitride based HEMTs

7,892,974

February 22, 2011

Method of forming vias in silicon carbide and resulting devices and circuits

7,893,500

February 22, 2011

High voltage GaN transistors

7,901,994

March 8, 2011

Methods of manufacturing group-III nitride semiconductor devices with silicon nitride layers

7,906,799

March 15, 2011

Nitride based transistors with a protective layer and a low-damage recess

7,915,644

March 29, 2011

Wide bandgap HEMTs with source connected field plates

7,919,791

April 5, 2011

Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same

7,928,475

April 19, 2011

Wide bandgap transistor devices with field plates

7,955,918

June 7, 2011

Robust transistors with fluorine treatment 

7,960,756

June 14, 2011

Methods of fabricating transistors including dielectrically supported gate electrodes

7,985,986

July 26, 2011

Normally off semiconductor devices

8,049,252

November 1, 2011

Methods of fabricating transistors including dielectrically supported gate electrodes and related devices

8,105,889

January 31, 2012

Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions

8,120,064

February 21, 2012

Wide bandgap transistor devices with filed plates

8,153,515

April 10, 2012

Methods of fabricating strain balanced nitride heterojunction transistors

8,169,005

May 1, 2012

High voltage GaN transistors

8,174,089

May 8, 2012

High voltage switching devices and process for forming same

8,198,178

June 12, 2012

Methods of fabrication normally off semiconductor devices

8,202,796

June 19, 2012

Method of forming vias in silicon carbide and resulting devices and circuits

8,203,185

June 19, 2012

Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods

8,212,289

July 3, 2012

Group III nitride field effect transistors (FETs) capable of withstanding high temperature reverse bias test conditions

8,212,290

July 3, 2012

High temperature performance capable GaN transistor

8,216,924

July 10, 2012

Methods of fabricating transistors using laser annealing of source/drain regions

8,274,159

September 25, 2012

Group-III nitride based flip chip integrated circuit and method for fabricating

8,283,699

October 9, 2012

GaN based HEMTs with buried field plates

8,330,244

December 11, 2012

Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same

8,344,398

January 1, 2013

Low voltage diodes with reduced parasitic resistance and method for fabricating

8,357,571

January 22, 2013

Methods of forming semiconductor contacts and related semiconductor devices

8,357,996

January 22, 2013

Devices with crack stops

8,390,101

March 5, 2013

High voltage switching devices and process for forming same

8,421,122

April 16, 2013

High power gallium nitride field effect transistor switches

8,432,012

April 30, 2013

Semiconductor devices including Schottky diodes having overlapping doped regions and methods of fabricating same