Skip to Main Content
浏览产品 (中文)


Wolfspeed Power C2M0080170P
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
NOTE: Not recommended for new designs. C2M0045170P is the recommended replacement.

Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. The newly released products are available in 45mΩ (C2M0045170P) and 80mΩ (C2M0080170P) and are designed for newly evolving applications requiring a 1500V blocking capability. Designers can reduce component-count and simplify designs by moving from multi-level topologies to simpler two-level topologies made possible by the improved switching performance and higher blocking capability. The device features low on-resistance combined with a low gate charge; making it ideally suited for solar boost converters; DC-DC applications as well as AC-AC converters. See our complete list of reference designs for examples of popular topologies commonly used with SiC today.


  • Minimum of 1700V Vbr across entire operating temperature range
  • Optimized package design with wide creepage/clearance between drain and source for high-voltage capability in high-pollution environments
  • Separate power source pin lowers source inductance and provides lower switching losses
  • Clip-mount design with no center mounting hole provides improved electrical isolation
  • 8mm of creepage/clearance between drain and source
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Recommended For New Design?
1700 V
80 mΩ
Gen 2
40 A
120 nC
105 pF
277 W
150 °C
TO-247-4 Plus
Apply Filters
Document Type
Document Name
Data Sheets
Sales Terms
Need information?
Ready to buy?
Find a Distributor
Want to keep in touch?

Knowledge Center

View All
Silicon Carbide

In The Studio: Challenges and Solutions in Scaling Up Silicon Carbide Production

Silicon Carbide raises the bar for what the world’s innovators can achieve, but there are unique challenges to producing it in high volume. Join Guy Moxey and Cengiz Balkas, Wolfspeed Materials Senior VP & GM, for a look at how Wolfspeed’s first-hand experience has made us an industry leader in the production of high-quality Silicon Carbide.
Continue Reading 
 In The Studio

Unlock a New Era of EV Efficiency with Wolfspeed Silicon Carbide

Electric vehicle adoption is growing exponentially and factors like climate change are driving a global shift to emissions-free motoring. Reaching true net zero requires a shift in how we engineer EV powertrains as well as the effectiveness of the systems that we use to charge them. Learn more about the advantages of Wolfspeed Silicon Carbide technologies in EVs.
Continue Reading 

The Batteries that Power EVs

This chapter of Wolfspeed’s What’s Under the Hood series shines the light on the powerhouse of BEVs — the battery pack — to reveal cell characteristics, battery chemistries, and architectures, as well as hazards, protections, and control.
Continue Reading 


Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2022 Wolfspeed, Inc.