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C2M0080170P

C2M0080170P

Wolfspeed Power C2M0080170P
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
NOTE: Not recommended for new designs. C2M0045170P is the recommended replacement.

Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. The newly released products are available in 45mΩ (C2M0045170P) and 80mΩ (C2M0080170P) and are designed for newly evolving applications requiring a 1500V blocking capability. Designers can reduce component-count and simplify designs by moving from multi-level topologies to simpler two-level topologies made possible by the improved switching performance and higher blocking capability. The device features low on-resistance combined with a low gate charge; making it ideally suited for solar boost converters; DC-DC applications as well as AC-AC converters. See our complete list of reference designs for examples of popular topologies commonly used with SiC today.

Features

  • Minimum of 1700V Vbr across entire operating temperature range
  • Optimized package design with wide creepage/clearance between drain and source for high-voltage capability in high-pollution environments
  • Separate power source pin lowers source inductance and provides lower switching losses
  • Clip-mount design with no center mounting hole provides improved electrical isolation
  • 8mm of creepage/clearance between drain and source
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Qualification
C2M0080170P
1700 V
80 mΩ
Gen 2
40 A
120 nC
105 pF
277 W
150 °C
TO-247-4 Plus
Industrial
Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Qualification
C2M0080170P
1700 V
80 mΩ
Gen 2
40 A
120 nC
105 pF
277 W
150 °C
TO-247-4 Plus
Industrial
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