Features
- Low forward voltage (Vf) drop over temperature
- Zero reverse-recovery charge for fast switching operations
- Robust MPS technology
- High reverse-voltage blocking capability
C3D10060G
C3D10060G
600 V, 10 A, TO-263-2 package, Gen 3 Discrete SiC Schottky Diode
Wolfspeed's 600 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with SiC MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.
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Featured Application Notes
600 V Discrete Silicon Carbide Schottky Diodes
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Product Details
Benefits
- Improves System Efficiency with lower conduction losses
- Enables high switching frequency operation
- Improves System Level Power Density
- Reduces System Size; Weight; and Cooling Requirements
Applications
- Industrial Power Supplies
- Server/Telecom
- EV-Charging Systems
- Energy Storage Systems (ESS)
- Uninterruptible Power Supplies (UPS)
- Battery Management Systems (BMS)
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Application Notes | 09/2022 | |
| Application Notes | 02/2022 | |
| Application Notes | 09/2015 | |
| Application Notes | 05/2023 | |
| Data Sheets | 11/2023 | |
| Product Catalog | 02/2024 | |
| Sales Terms | 12/2021 | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 02/2024 |
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