Wolfspeed’s CG2H40010 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CG2H40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down, flange and solder-down pill packages.
Documents
Data Sheets
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CG2H40010
Version: 2
Mar 20, 2019
Line Card
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RF Line Card
Oct 10, 2019
RF Application Notes
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Broadband Jamming Power Amplifier Reference Design
Mar 25, 2019
ESD Testing on Wolfspeed GaN Products
Mar 26, 2019
GaN HEMT Biasing Circuit with Temperature Compensation
Version: B
May 10, 2019
Guide for Soldering Packaged Transistors
Version: A
Apr 8, 2019
Indium Mounting Procedure
Apr 25, 2019
Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model
Version: A
Jan 21, 2016
Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model
Version: C
Sep 3, 2015
Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture
Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications
Feb 17, 2017
S-parameters
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CG2H40010 S-parameters, VDS = 28 V, IDQ = 100 mA
Mar 7, 2019
CG2H40010 S-parameters, VDS = 28 V, IDQ = 200 mA
Mar 7, 2019
CG2H40010 S-parameters, VDS = 28 V, IDQ = 500 mA
Mar 7, 2019
Sales Terms
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Sales Terms and Conditions
Version: M
Jul 19, 2019
Technical Papers & Articles
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22 W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications
Version: Design
by Jorge Moreno Rubio, Jie Fang, R. Quaglia, V. Camarchia, M. Pirola, S. Donati Guerrieri, G. Ghione - The design, implementation and characterization of a Doherty Power Amplifier (DPA) for 3.5 GHz WiMAX applications are discussed. The DPA has been implemented using a commercial GaN HEMT from Cree inc., following a class AB and C scheme for the main and peak module, respectively.
Sep 3, 2015
3â3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages
Version: Design
by Jorge Moreno Rubio; Jie Fang; Vittorio Camarchia; Roberto Quaglia; Marco Pirola; Giovanni GhioneWe discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3â3.6-GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth.
Aug 26, 2015
5-W Microwave Integrated Circuits (MIC) Gallium Nitride (GaN) Class F Power Amplifier Operating at 2.8 GHz
Version: Design
by Caroline W. Waiyaki - Report for US Army Research Laboratory. A key component of microwave telecommunication systems is the power amplifier (PA). The design parameters of a communication system, such as link performance, power budget, and thermal design are typically driven by the power amplifierâs linearity, output power, and efficiency.
Sep 3, 2015
6-Port GaN HEMT Models Help Designers Optimize PA Efficiency
Version: Design
by Raymond S. Pengelly, William Pribble, Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Oct 12, 2018
A GaN HEMT Class AB RF Power Amplifier
Version: Design
by Deniz Gezmiş Tas; Osman Ceylan; H. Bülent Yağcı - In this article, an RF power amplifier which has a crucial importance for RF transceivers is designed and implemented. The main aim of the design is making the power amplifier linear at the center frequency 1.8 GHz. Linearity was measured with two tone test and according to the result of the test, the Carrier-to-Intermodulation (C/I) ratio should have been above 30 dB and two fundamental carriers with the 5 MHz space should be at least 1.25 Watt. Also, efficiency was tried to be kept as high as possible.
Sep 3, 2015
A GaN HEMT Power Amplifer with Variable Gate Bias from Envelope and Phase Signals
Version: Design
by Ellie Cijvat, Kevin Tom, Mike Faulkner, and Henrik Sjöland - This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination.
Sep 3, 2015
A High Efficiency Class-E Amplifier Utilizing GaN HEMT Technology - abstract
Version: Design
by William L. Pribble, Jim M Milligan, and Raymond S. Pengelly - Abstract from the 2006 IEEE Topical Workshop on PAs for Wireless Communications (RWS) Presentation from the 2006 IEEE Radio and Wireless Symposium in San Diego A class-E power amplifier based on a GaN HEMT cell has been designed and tested.
Sep 3, 2015
A High Efficiency Class-E Amplifier Utilizing GaN HEMT Technology - presentation
Version: Design
by William L. Pribble, Jim M Milligan, and Raymond S. Pengelly - Abstract from the 2006 IEEE Topical Workshop on PAs for Wireless Communications (RWS) Presentation from the 2006 IEEE Radio and Wireless Symposium in San Diego A class-E power amplifier based on a GaN HEMT cell has been designed and tested.
Sep 3, 2015
A High Power, High Efficiency Amplifier using GaN HEMT
Version: Design
by Bumjin Kim, D. Derickson, and C. Sun - A class B and a class F power amplifier are described using a GaN HEMT device.
Sep 3, 2015
A Highly Efficient 1.95-GHz, 18-W Asymmetric Multilevel Outphasing Transmitter for Wideband Applications
Version: Design
by Philip A. Godoy, SungWon Chung, Taylor W. Barton, David J. Perreault, and Joel L. Dawson - A 1.95-GHz asymmetric multilevel outphasing (AMO) transmitter with class-E GaN power amplifiers (PAs) and discrete supply modulators is presented.
Sep 3, 2015
A Highly Efficient Asymmetric Doherty Power with a New Output Combining Circuit
Version: Design
by Junghwan Son, Ildu Kim, Junghwan Moon, Juyeon Lee, Bummam Kim - An asymmetric Doherty Power Amplifier (ADPA) is introduced using a new output combining circuit for easy of implementation with a large matching tolerance. The proposed APDA has been implemented using GaN HEMT devices at 2.6 GHz for WiMAX signal with 5MHz bandwidth and 8.3 dB peak to average power ratio.
Sep 3, 2015
A Multimode/Multiband Envelope Tracking Transmitter with Broadband Saturated Power Amplifier
Version: Design
by Moon, Junghwan Son, Juyeon Lee, Jungjoon Kim, Seunghoon Jee, Seungchan Kim, and Bumman KimA multimode/multiband envelope tracking (ET) transmitter consisting of a hybrid switching amplifier (HSA) and a broadband saturated power amplifier (PA) is developed across 1.3 to 2.7 GHz.
Aug 26, 2015
A Novel Highly Efficient Broadband Continuous Class-F RFPA Delivering 74% Average Efficiency for an Octave Bandwidth
Version: Design
by V. Carrubba, J. Lees, J. Benedikt, P. J. Tasker, S. C. Cripps - A novel, highly efficient and broadband RF power amplifier (PA) operating in "continuous class-F" mode has been realized for first time.
Sep 3, 2015
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
Version: Design
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Apr 8, 2019
A Saturated Power Amplifier with High Efficiency - MTT-5 Student Design Competition Winner (2008)
Version: Article
by Jangheon Kim, Junghwan Moon, Bumman Kim, and Raymond S. Pengelly - This article presents the design of the winning PA with PAE of 73.2% at 3.2GHz operating frequency, which is equivalent to the weighted PAE performance of 97.9% by students from Pohang University of Science and Technology (POSTECH).
Sep 3, 2015
A Simplified Broadband Design Methodology for Linearized High-Efficiency Continuous Class-F Power Amplifiers
Version: Design
by Neal Tuffy; Lei Guan; Anding Zhu; Thomas J Brazil - This paper describes the design approach employed for achieving approximated continuous Class-F power amplifier (PA) modes over wide bandwidths. The importance of the nonlinear device capacitance for wave-shaping the continuous Class-F voltage and current waveforms is highlighted, thus reducing the device sensitivity to second and third harmonic impedance terminations.
Sep 3, 2015
Advanced Design of a Double Doherty Power Amplifier with a Flat Efficiency Range
Version: Design
by Yong-Sub Lee, Mun-Woo Lee, Sang-Ho Kam, and Yoon-Ha Jeong - This paper reports a new double Doherty power amplifier (DDPA) with a flat efficiency range, which consists of two-stage amplifiers.
Sep 3, 2015
Application of GaN Class E Amplifers in EER/ET Amplifier Systems
Version: Design
by D. Kimball, J. Jeong, C. Hsia, P. Draxler, P. Asbeck, D. Choi, W. Pribble and R. Pengelly - Class E amplifiers offer significant advantages for high efficiency operation, although they have been largely limited to relatively low microwave frequencies and/or low output powers. GaN HFETs are well suited to Class E at high powers and high frequencies, inasmuch as their output capacitance is particularly low for a device with a given output power, and has little voltage dependence.
Sep 3, 2015
Application of Non Linear Models in a range of challenging GaN HEMT Power Amplifier Designs
Version: Design
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Oct 12, 2018
Applied Wave Research (AWR), Macquarie University and Cree, Inc. Success Story
Version: Article
by Michael Boers - Michael Boers, Ph.D. Student, Wins IEEE MTT-S Power Amplifier Competition, 85% PAE Achieved with Microwave Office and Cree, Inc. GaN HEMT.
Sep 3, 2015
Behaviors of Class-F and Class-F-1 Amplifiers
Version: Design
by Junghwan Moon; Seunghoon Jee; Jungjoon Kim; Jangheon Kim; Bumman Kim - Operational behaviors of the class-F and class-F amplifiers are investigated. For the half-sinusoidal voltage waveform of the class-F amplifier, the amplifier should be operated in the highly saturated region, in which the phase relation between the fundamental and second harmonic currents are out-of-phase. The class-F amplifier can operate at the less saturated region to form a half sinewave current waveform. Therefore, the class-F amplifier has a bifurcated current waveform from the hard saturated operation, but the class-F amplifier operates as a switch at the saturated region for a second harmonic tuned half-sine waveform.
Sep 3, 2015
Characterizing the Vdd-to-AM and Vdd-to-PM Nonlinearities in a GaN HEMT Class E Power Amplifier
Version: Design
by J. A. García, B. Bedia, R. Merlín, P. Cabral and J. C. Pedro - An experimental procedure is proposed for accurately characterizing the Vdd-to-AM and Vdd-to-PM nonlinearities in a Class E power amplifier (PA). Based on GaN HEMT technology,...
Sep 3, 2015
Comprehensive First Pass Design Methodology for High Efficiency Mode Power Amplifier
Version: Article
by David Yu-Ting Wu, Slim Boumaiza - Research on digital predistortion and advanced transmitters utilizing nonlinear PAs have begun to mitigate the concerns about nonlinearity.
Sep 3, 2015
Concurrent planar multiharmonic dual-band load coupling network for switching-mode power amplifiers
Version: Design
by Danish Kalim and Renato Negra - This paper presents a concept to design a compact planar multiharmonic load transformation network (MHLTN) for the realisation of highly efficient dual-band power amplifiers (PAs). The topology was applied to implement a class-E PA using a GaN High Electron Mobility Transistor (HEMT) in a hybrid design for GSM1810 and LTE2655 operation.
Sep 3, 2015
Concurrent Tri-Band GaN HEMT Power Amplifier Using Resonators in Both Input and Output Matching Networks
Version: Design
by Zhebin Wang and Chan-Wang Park - This paper presents a novel method by using resonators in both input and output matching networks to design a tri-band GaN HEMT power amplifier. Two parallel resonators in series as one frequency selection element are used for each operation frequency. By applying this frequency selection element in both input and output matching networks constructed with microstrip line, tri-band matching network is realized. With our proposed frequency selection element, we can use the conventional L-type structure to design matching network for three frequencies so that the design analysis procedure is easier. We also propose a new simplified output matching network by using bias line to match the output impedance to reduce the number of resonators. To demonstrate our method, we fabricate a tri-band power amplifier that can work at 1 GHz, 1.5 GHz, and 2.5 GHz concurrently. Experimental results show that the output power is 39.8 dBm, 40.8 dBm, and 39.2 dBm with 56.4%, 58.3%, and 43.4% power added efficiency (PAE) at 1 GHz, 1.5 GHz and 2.5 GHz, respectively.
Sep 3, 2015
Controlling Active Load-Pull in a Dual-Input, Inverse-Load Modulated Doherty Architecture
Version: Design
by Thomas M. Hone; Souheil Bensmida; Kevin A. Morris; Mark A. Beach; Joe P. McGeehan; Jonathan Lees; Johannes Benedikt; Paul J. Tasker - Mathematical analysis of Doherty amplifiers have assumed many simplifications. Most notably, the peaking amplifier does not contribute power into the load and the peaking stage has an observed impedance of infinity. This paper will show that these simplifications impair the performance of a single-input Doherty amplifier and that phase tuning for compensation is needed to improve the overall system performance.
Sep 3, 2015
Design Methodology for Dual-Band Doherty Power Amplifier With Performance Enhancement Using Dual-Band Offset Lines
Version: Design
by Karun Rawat; Fadhel M. GhannouchiThis paper proposes a design methodology for dual-band Doherty power amplifier (DPA) with performance enhancement using dual-band phase offset lines. In the proposed architecture, 50-â¦dual-band offset lines with arbitrary electric lengths at two frequencies are key components, and a novel analytical design solution has been proposed for their design and implementation.
Aug 26, 2015
Design of a Class-F Power Amplifier
Version: Design
by Tian He; Uma Balaji - A Class F power amplifier (PA) at 2.5 GHz has been designed and fabricated. Test results show 15.7 dB gain with 75.75% power added efficiency (PAE ), at an input level of 25 dBm.
Sep 3, 2015
Design of concurrent multiband biasing networks
Version: Design
by Anh Nghiem Xuan and Renato Negra - A new technique for designing concurrent multiband biasing networks for multiband RF power amplifiers is presented. The proposed design technique can theoretically be applied for a large number of frequency bands. The biasing network (BN) is composed of a transmission line and high impedance quaterwave open stubs (QWOS) that are located at appropriate positions along the transmission line. Two tri-band BNs for 1.49 GHz, 2.15 GHz and 2.65 GHz frequencies were designed, fabricated and display very good performance with regard to the input impedance seen looking toward the BNs from the active devices, such as FETs, are approximately open for all three bands.
Sep 3, 2015
Development of a GaN HEMT Class-AB Power Amplifier for an Envelope Tracking System at 2.45 GHz
Version: Design
by P. Suebsombut, O. Koch, S. Chalermwisutkul - A class-AB power amplifier was designed for an envelope tracking (ET) application. Class-AB amplifier is widely used in wireless communication systems due to the compromise between linearity and efficiency.
Sep 3, 2015
Development of a Wideband Highly Efficient GaN VMCD VHF/UHF Power Amplifier
Version: Design
by S. Lin and A. E. Fathy - A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 43 dBm output power and 63% drain efficiency has been successfully developed.
Sep 3, 2015
Device Modeling with NVNAs and X-parameters
Version: Design
by D. E. Root, J. Xu, J. Horn, M. Iwamoto, and G. Simpson - It is demonstrated that Xparameters measured versus load at the fundamental frequency predict well the independent effects of harmonic load tuning on a 10W GaN packaged transistor without having to independently control harmonic loads during characterization.
Sep 3, 2015
Digital Predistorted Inverse Class-F GaN PA with Novel PAPR Reduction Technique
Version: Design
by Jingqi Wang, Yingjie Xu, and Xiaowei Zhu - In this paper, a digital predistorted inverse class-F GaN power amplifier with novel PAPR reduction technique, in which not only peaks but also valleys of signal are clipped to reduce the PAPR as much as possible, is presented.
Sep 3, 2015
Doherty Amplifier with Envelope Tracking for High Efficiency
Version: Design
by Junghwan Moon, Junghwan Son, Jungjoon Kim, Ildu Kim, Seunghoon Jee, Young Yun Woo, and Bumman Kim - A Doherty amplifier assisted by a supply modulator is presented using 2.14 GHz GaN HEMT saturated power amplifier (PA). A novel envelope shaping method is applied for high power-added efficiency (PAE) over a broad output power range.
Sep 3, 2015
Double the Band and Optimize
Version: Design
by Karun Rawat; Mohammad S. Hashmi; Fadhel M. Ghannouchi - The emergence of increasing multifunctionality and high data rate advanced wireless standards, such as WiMAX and LTE-advanced, requires communication systems capable of operating at multiple frequencies simultaneously. This situation has led to scenarios where the radios with the ability to function at several distinct frequencies are required. Seamless transition from one existing standard (e.g., 3G) to upcoming standards (e.g., 4G) with backward compatibility is also a motivating factor for the deployment of multiband radio architectures.
Sep 3, 2015
Effects of Even-Order Terms on Behavior Model of Envelope Tracking Transmitters
Version: Design
by Junghwan Moon, Juyeon Lee, Junghwan Son, Jungjoon Kim, Seunghoon Jee, Seungchan Kim, and Bumman Kim - The effects of even-order nonlinear terms on ET transmitters are explored for the behavior model and digital predistortion technique.
Sep 3, 2015
Efficiently Amplified
Version: Article
by Bumman Kim, Ildu Kim, Junghwan Moon - A general overview and practical design methods for supply-modulated transmitters are presented. Disadvantages of the conventional EER transmitter are discussed, such as wideband sensitivity, power leakage, and poor PAE.
Sep 3, 2015
FPGA-Based Set-up for RF Power Amplifier Dynamic Supply with Real-Time Digital Adaptive Predistortion
Version: Design
by Pere Gilabert; Gabriel Montoro; Eduard Bertran; Jose A. Garcia - This paper presents an exhaustive description of a field programmable gate-array (FPGA) based set-up for envelope tracking and dynamic biasing of RF power amplifiers (PA). For testing purposes a GaN HEMT RF PA operating at 3.5 GHz was considered.
Sep 3, 2015
High Efficiency Class-E tuned Doherty Amplifier using GaN HEMT
Version: Design
by Gil Wong Choi, Hyoung Jong Kim, Woong Jae Hwang, Suk Woo Shin, Jin Joo Choi, and Sung Jae Ha - This paper describes the design and fabrication of a highly efficient switching-mode Class-E Doherty power amplifier using gallium nitride (GaN) high electron mobility transistor (HEMT) for S-band radar applications.
Sep 3, 2015
High Power, High Conversion, Gain Frequency Doublers Using SiC MESFETs and AlGaN/GaN HEMTs
Version: Design
by Kelvin Yuk, G.R. Branner and Claudia Wong - A method of determining the optimal harmonic terminations using accurate nonlinear computer models and load- and source-pull simulations is described.
Sep 3, 2015
High-power, High-efficiency Power Amplifier Reference Design in III-V Wide Bandgap Gallium Nitride Technology using Nonlinear Network Analyzer and X-parameters
Version: Design
by Troels S. Nielsen, Ulrik R. Madsen, Michael Dieudonné - A complete power amplifier design using new Nonlinear Vector Network Analyzer (NVNA) and X-parameter technologies. A high-power, pulsed Continuous Wave (CW) NVNA setup is presented and harmonic tuning capabilities of the measured X-parameter model is demonstrated using the same setup.
Sep 3, 2015
Highly Efficient Operation Modes in GaN Power Transistors Delivering Upwards of 81% Efficiency and 12W Output Power
Version: Design
by Peter Wright, Aamir Sheikh, Chris Roff, P. J. Tasker and J. Benedikt - Interactive Forum paper from the 2008 International Microwave Symposium (IMS) Presentation Supplement This paper investigates the development of an inverse class-F design procedure for obtaining very high efficiency performance at high power levels. RF waveform engineering was used to obtain high efficiency inverse class-F waveforms at the device current-generator plane.
Sep 3, 2015
Highly Efficient Three-Stage Doherty Power Amplifier with Adaptive Driving Amplifier for 3.5 GHz WiMAX Applications
Version: Design
by Woo Lee, Sang-Ho Kam, and Yoon-Ha Jeong - This paper describes a new three-stage Doherty power amplifier (DPA) with an adaptive driving amplifier inserted at the input of the carrier cell.
Sep 3, 2015
Hybrid EER transmitter using Highly Efficient Saturated Power Ampliï¬er for 802.16e Mobile WiMAX application
Version: Design
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman KimDemonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Ampliï¬er (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Aug 26, 2015
Investigation of a Class-F-1 Power Amplifier with a Nonlinear Output Capacitor
Version: Design
by Moon, Seunghoon Jee, Jungjoon Kim, Junghwan Son, Seungchan Kim, Juyeon Lee, Seokhyeon Kim, and Bumman Kim - The practical operating conditions of class-F-1 amplifier are investigated by analyzing the current and voltage waveform shapings. In the experiment, the saturated amplifier is designed and implemented using Cree GaN HEMT CGH40010 at 2.655 GHz. It provides a power-added efficiency of 73.9% at saturated output power of 41 dBm.
Sep 3, 2015
Investigation of a Class-J Power Amplifier with a Nonlinear Cout for Optimized Operation
Version: Design
by Junghwan Moon; Jungjoon Kim; Bumman Kim - This paper presents the operation principle of Class-J power amplifiers (PAs) with linear and nonlinear output capacitors (Cout s). The efficiency of a Class-J amplifier is enhanced by the nonlinear capacitance because of the harmonic generation from the nonlinear Cout, especially the second-harmonic voltage component.
Sep 3, 2015
Linearity Enhancement of GaN HEMTs under Complex Modulated Excitation by Optimizing the Baseband Impedance Environment
Version: Design
by M. Akmal, V. Carrubba, J. Lees, S. Bensmida, J. Benedikt, K. Morris, M. Beach, J. McGeehan, P. J. Tasker - This paper demonstrates how the linearity performance of a 10W GaN HEMT can be dramatically improved by actively engineering the baseband impedance environment around the device.
Sep 3, 2015
Low Frequency Parasitic Effects in RF Transistors and their Impact on Power Amplifier Performances
Version: Design
by Raymond Quéré; Raphael Sommet; Philippe Bouysse; Tibault Reveyrand; Denis Barataud; Jean Pierre Teyssier; Jean Michel Nébus - In this paper Low Frequency (LF) parasitic effects are assessed through three kinds of measurements. It is shown that LF S-parameters measurements allow to extract the thermal impedance of Heterojunction Bipolar Transistors (HBTs) and to put dispersive effects of AlGaN/GaN High Electron Mobility Transistors (HEMTs) into evidence. Large signal (RF pulsed and two tone intermodulation) confirm the impact of those parasitic effects on performances of Power Amplifiers.
Sep 3, 2015
Methodology for Realizing High Efficiency Class-J Linear and Broadband Power Amplifier
Version: Article
by Peter Wright, Jonathan Lees, Johannes Benedikt, Paul J. Tasker, and Steve C. Cripps - The design and implementation of a class-J mode RF power amplifier is described. The experimental results indicate the class-J mode's potential in achieving high efficiency across extensive bandwidth, while maintaining predistortable levels of linearity.
Sep 3, 2015
Microwave Journal: Test Bench 2009 Mesuro Demonstrates Record Efficiencies with Creeâs 10W GaN at IMS 2009
Version: Article
A 10W GaN device from Cree achieving record efficiencies in excess of 81% was also demonstrated at IMS using an active harmonic load-pull capability from Mesuro, a new measurement company with ties to Cardiff University and Tektronix.
Aug 26, 2015
Multiharmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers
Version: Design
by Wilfried Demenitroux, Christophe Mazière, Emmanuel Gatard, Stéphane Dellier, Michel Campovecchio and Raymond Quéré - This paper presents a complete validation of the new behavioral model called the multiharmonic Volterra (MHV) model for designing wideband and highly efficient power amplifiers with packaged transistors in computer-aided design (CAD) software. The MHV models of 10- and 100-W packaged GaN transistors have been extracted from time-domain load–pull measurements under continuous wave and pulsed modes, respectively.
Sep 3, 2015
Power Amplifier Memory-less Pre-distortion for 3GPP LTE Application
Version: Design
by S. Bensmida, K. Morris, J. Lees, P. Wright, J. Benedikt, P. J. Tasker, M. Beach, J. McGeehan - A new and simple Power Amplifier (PA) linearization method is proposed and demonstrated using a very high efficiency yet inherently nonlinear inverse class-F PA.
Sep 3, 2015
Pulsed Operation and Performance of Commercial GaN HEMTs
Version: Design
by F. Fornetti, K.A. Morris, M.A. Beach - The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc.
Sep 3, 2015
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
Version: Design
by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Oct 12, 2018
Reliability of GaN/AlGaN HEMT MMIC Technology on 100-mm 4H-SiC
Version: Design
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Apr 8, 2019
Switching Behavior of Class-E Power Amplifier and Its Operation Above Maximum Frequency
Version: Design
by Seunghoon Jee; Junghwan Moon; Jungjoon Kim; Junghwan Son; Bumman Kim - The switching behavior of Class-E power amplifiers (PAs) is described. Although the zero voltage switching can be performed properly, the charging process at the switch-off transition cannot be abrupt and the waveform deviates from the ideal shape, degrading the efficiency. For the operation above maximum frequency, the charging process should be even faster but it cannot follow. Moreover, the discharging process is not sufficiently fast and further degrades the efficiency. The discharging process is assisted by the bifurcated current at saturation. The performance of the Class-E PA above the maximum frequency is enhanced by the nonlinear , which helps to shape the voltage waveform. The bifurcated current itself cannot generate enough of a second-harmonic voltage component to shape the required voltage waveform. The performance of the Class-E PA can be further improved by a second-harmonic tuning and a conjugate matched output load, leading to the saturated PA. Compared with the Class-E PA, the saturated amplifier delivers higher output power and efficiency. A highly efficient saturated amplifier is designed using a Cree GaN HEMT CGH40010 device at 3.5 GHz. It provides a drain efficiency of 75.8% at a saturated power of 40.2 dBm (10.5 W).
Sep 3, 2015
The Application of GaN HEMTs to Pulsed PAs and Radar Transmitters
Version: Design
by Francesco Fornetti, Mark Beach; James G. Rathmell - GalliumNitride (GaN) solid-state devices are emerging as a replacement for vacuum electron devices (VED) in radar systems. These solid-state devices have significant thermal and trapping effects that, although not ruling out their use, do complicate it. This paper evaluates several commercial GaN devices, using pulse testing, under conditions typical of modern, high-frequency radar systems.
Sep 3, 2015
The Effect of Baseband Impedance Termination on the Linearity of GaN HEMTs
Version: Design
by M. Akmal, J. Lees, S. Bensmida, S. Woodington, V. Carrubba, S. Cripps, J. Benedikt, K. Morris, M. Beach, McGeehan and P. J. Tasker - This paper demonstrates the significant effect of baseband impedance termination on the linearity performance of a 10W GaN HEMT device driven to deliver a peak envelope power of approximately 40dBm.
Sep 3, 2015
Thermal Analysis and its application to High Power GaN HEMT Amplifiers
Version: Design
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Apr 8, 2019
X-Parameter-Based Frequency Doubler Design
Version: Design
by Jialin Cai; Thomas J. Brazil - As a kind of superset of S-parameters, X-parameters are becoming increasingly popular in non-linear device simulation and measurement. Due to their good accuracy and convenient extraction procedures, X-parameter-based transistor device models have so far been mainly used in power amplifiers design. They have been limited to this kind of design up to now because the X-parameter models extracted are only suitable for fundamental frequency circuit design.
Sep 3, 2015
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