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CG2H40010F-AMP1-REF

CG2H40010F-AMP1 Design Files

Software Reference Designs including Assembly Drawing; BOM; Layout; Schematic; and PCB Notes.

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Frequency Min
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CG2H40010F-AMP1-REF
Yes
GaN on SiC
0.5 GHz
55%
28 V
Evaluation Board
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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