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CG2H80045D

CG2H80045D

CG2H80045D
CG2H80045D
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Wolfspeed’s CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

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Recommended For New Design?
Technology
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CG2H80045D-GP4
Yes
GaN on SiC
8 GHz
45 W
15 dB
65%
28 V
Discrete Bare Die
Die
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CG2H80045D-GP4
Yes
GaN on SiC
8 GHz
45 W
15 dB
65%
28 V
Discrete Bare Die
Die
Features
  • 45 W Typical PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 8 GHz Operation
  • High Efficiency
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Product Catalog
Sales Terms
Document Type
Document Name
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Product Catalog
Sales Terms
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GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
Register Now 
 Webinars
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GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
Continue Reading 
 Technical Articles
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GaN on SiC

Countering RCIEDs with GaN’s Bandwidth & Power Density Advantages

Counter-RCIED devices used by the military and law enforcement rely on jamming wireless trigger signals. This article will discuss how GaN’s high-temperature reliability and power density capability enables jammer equipment to meet system SWaP-C requirements.
Continue Reading 
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