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CG2H80120D

CG2H80120D

Wolfspeed CG2H80060D 60-W 8.0-GHz GaN HEMT Die
120-W; DC – 8000-MHz; 28 V; GaN HEMT Die
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Wolfspeed’s CG2H80120D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CG2H80120D-GP4
Yes
GaN on SiC
DC
8 GHz
120 W
>12 dB
65%
28 V
Discrete Bare Die
Die
Features
  • 120 W Typical PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 8 GHz Operation
  • High Efficiency
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
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Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by David A. Calvillo; Leo C.N. de Vreede; Michel de Langen – A power-scalable – efficient and very wideband GaN class-E high-power amplifier is described. The large bandwidth performance is achieved by employing the so-called “class-E with parallel-circuit” loading conditions using a very compact all-lumped element implementation. The fundamental loading is realized by the magnetizing inductance of a novel bondwire-based transformer connected directly at the transistor drain. The PA input and output matching networks are entirely implemented with bondwire inductors and MOS/MIM capacitors.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
|
Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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 Technical Articles
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