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CGH35030F

CGH35030F

Wolfspeed CGH35030 30W 3300 - 3900-MHz 28-V; GaN HEMT
30-W; 3300 – 3900-MHz; 28-V; GaN HEMT for WiMAX

Wolfspeed’s CGH35030F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35030F ideal for 3.3 – 3.9-GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH35030F
Yes
GaN on SiC
6 GHz
30 W
12 dB
25%
28 V
Packaged Discrete Transistor
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH35030F
Yes
GaN on SiC
6 GHz
30 W
12 dB
25%
28 V
Packaged Discrete Transistor
Flange
Features
  • 3.3 – 3.9 GHz Operation
  • 30 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 4.0 W PAVE < 2.0 % EVM
  • 25% Efficiency at 4 W PAVE
Applications
  • WiMAX
  • BWA
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Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Design Files
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Marco J. Pelk – W. C. Edmund Neo – John R. Gajadharsing – Raymond S. Pengelly – Leo C. N. de Vreede – A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Reinel Marante – M. Nieves Ruiz – Leysi Rizo – Lorena Cabria – José A. García – In this paper – the design of a class E2 resonant DC/DC converter – operating at UHF band – is proposed. Combining the use of GaN HEMT devices – both for the inverter and the synchronous rectifier – with high Q lumped-element multi-harmonic matching networks – a peak efficiency value of 72% has been obtained at 780 MHz with a 10.3 W output power.
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Cree GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by José A. García – Reinel Marante – María N. Ruiz – In this paper – the design and performance of class E2 resonant topologies for DC/DC power conversion at Ultra High Frequencies (UHF) are considered. Combining the use of RF GaN HEMT devices – both for the inverter and the synchronous rectifier – with high Q lumped-element terminating networks – peak efficiency values over 70% may be obtained. Control strategies based on carrier bursting – switching frequency modulation – or outphasing are also shown to be feasible. Taking advantage of their improved dynamic response – when compared to low frequency more traditional switched-mode converters – a class E3 polar transmitter for the EDGE standard has been designed and tested at 770 MHz – offering an average global efficiency over 46% at 4.3 W of output power – through RF-based amplitude and phase constituting branches.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Ecology
CG2H40010F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Product Ecology
CG2H40010F – CG2H40025F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Design Files
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Marco J. Pelk – W. C. Edmund Neo – John R. Gajadharsing – Raymond S. Pengelly – Leo C. N. de Vreede – A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Reinel Marante – M. Nieves Ruiz – Leysi Rizo – Lorena Cabria – José A. García – In this paper – the design of a class E2 resonant DC/DC converter – operating at UHF band – is proposed. Combining the use of GaN HEMT devices – both for the inverter and the synchronous rectifier – with high Q lumped-element multi-harmonic matching networks – a peak efficiency value of 72% has been obtained at 780 MHz with a 10.3 W output power.
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Cree GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by José A. García – Reinel Marante – María N. Ruiz – In this paper – the design and performance of class E2 resonant topologies for DC/DC power conversion at Ultra High Frequencies (UHF) are considered. Combining the use of RF GaN HEMT devices – both for the inverter and the synchronous rectifier – with high Q lumped-element terminating networks – peak efficiency values over 70% may be obtained. Control strategies based on carrier bursting – switching frequency modulation – or outphasing are also shown to be feasible. Taking advantage of their improved dynamic response – when compared to low frequency more traditional switched-mode converters – a class E3 polar transmitter for the EDGE standard has been designed and tested at 770 MHz – offering an average global efficiency over 46% at 4.3 W of output power – through RF-based amplitude and phase constituting branches.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Ecology
CG2H40010F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Product Ecology
CG2H40010F – CG2H40025F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Product Catalog
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