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Peak Output Power 240W
Application Radar
Power Gain 11.6 dB @ PIN = 42.0 dBm
Operating Voltage 28 V
Frequency 3.1 - 3.5 GHz
Package Type Flange
Drain Efficiency 57 %
Internal Matching Yes - 50Ω
Technology GaN on SiC

240-W, 3100 – 3500-MHz, 50-ohm Input/Output-Matched, GaN HEMT for S-Band Radar Systems

SKU: CGH35240

Wolfspeed’s CGH35240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35240F ideal for 3.1 – 3.5-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.



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