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CGH40025

Wolfspeed CGH40025
25-W RF Power GaN HEMT
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Note: CGH40025F/P are Not Recommended for New Designs. Refer to CG2H40025F/P

Wolfspeed’s CGH40025 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40025; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down; flange package and solder-down pill packages.

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH40025F
No
GaN on SiC
DC
6 GHz
25 W
>13 dB
62%
28 V
Packaged Discrete Transistor
Flange
CGH40025P
No
GaN on SiC
DC
6 GHz
25 W
>13 dB
62%
28 V
Packaged Discrete Transistor
Pill
CGH40025F-AMP
No
GaN on SiC
3.4 GHz
3.8 GHz
25 W
>13 dB
62%
28 V
Evaluation Board
Flange
Features
  • Up to 6 GHz Operation
  • 15 dB Small Signal Gain at 2.0 GHz
  • 13 dB Small Signal Gain at 4.0 GHz
  • 30 W typical PSAT
  • 62% Efficiency at PSAT
  • 28 V Operation
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
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Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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