Features
- Up to 6 GHz Operation
- 15 dB Small Signal Gain at 2.0 GHz
- 13 dB Small Signal Gain at 4.0 GHz
- 30 W typical PSAT
- 62% Efficiency at PSAT
- 28 V Operation
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
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CGH40025F | No | GaN on SiC | DC | 6 GHz | 25 W | >13 dB | 62% | 28 V | Packaged Discrete Transistor | Flange | ||
CGH40025P | No | GaN on SiC | DC | 6 GHz | 25 W | >13 dB | 62% | 28 V | Packaged Discrete Transistor | Pill | ||
CGH40025F-AMP | No | GaN on SiC | 3.4 GHz | 3.8 GHz | 25 W | >13 dB | 62% | 28 V | Evaluation Board | Flange |
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S-parameters | |
S-parameters | |
Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Product Catalog | |
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