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CGH55030F1/P1

Wolfspeed CGH55030F1/P1 30W 5500-5800MHz 28V GaN HEMT
Peak Output Power 30W
Application General-Purpose Broadband, 28 V
Average Power (PAVE) 4.0 W @ < 2.0% EVM
Operating Voltage 28 V
Frequency DC - 6.0 GHz
Package Type Flange/Pill
Small Signal Gain 10 dB
Efficiency 25 % @ 4 W PAVE

30-W, 5500 – 5800-MHz, 28-V, GaN HEMT
for WiMAX

SKU: CGH55030F1/P1

Wolfspeed’s CGH55030F1/CGH55030P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5 – 5.8-GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 – 5.5-GHz applications as well.

Features:

  • 300 MHz Instantaneous Bandwidth 
  • Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications 
  • Designed for Multi-carrier DOCSIS Applications

Documents

Data Sheets

Document Name Date Updated Download
CGH55030F1/P1
Version: 3.3
Jan 22, 2019

Line Card

Document Name Date Updated Download
RF Line Card Oct 10, 2019

RF Application Notes

Document Name Date Updated Download
GaN HEMT Biasing Circuit with Temperature Compensation
Version: B
May 10, 2019
Guide for Soldering Packaged Transistors
Version: A
Apr 8, 2019
Indium Mounting Procedure Apr 25, 2019
Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model
Version: A
Jan 21, 2016
Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model
Version: C
Sep 3, 2015
Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors
Version: A
Apr 8, 2019

RF Product Ecology

Document Name Date Updated Download
440166 GaN HEMT REACh Declaration
CG2H40010F, CGH27015F, CGH27030F, CGH35015F, CGH35030F, CGH40010F, CGH40025F, CGH55015F1, CGH55015F2, CGH55030F1, CGH55030F2, CGHV40030F
Jul 25, 2019
440166 GaN HEMT RoHS Declaration
Version: RS4013032018
CG2H40010F, CG2H40025F, CGH27015F, CGH27030F, CGH35015F, CGH35030F, CGH40010F, CGH40025F, CGH55015F1, CGH55015F2, CGH55030F1, CGH55030F2, CGHV40030F
Dec 26, 2018
440196 GaN HEMT REACh Declaration
CGH27015P, CGH27030P, CGH35015P, CGH40010P, CGH40025P, CGH55015P1, CGH55015P2, CGH55030P1, CGH55030P2, CGHV40030P
Jul 25, 2019
440196 GaN HEMT RoHS Declaration
Version: RS4015052019
CG2H40010P, CG2H40025P, CGH27015P, CGH27030P, CGH35015P, CGH40010P, CGH40025P, CGH55015P1, CGH55015P2, CGH55030P1, CGH55030P2, CGHV40030P
Jul 25, 2019

RF Videos

Document Name Date Updated Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications Feb 17, 2017

S-parameters

Document Name Date Updated Download
CGH55030F1/P1 S-parameters, VDS = 28 V, IDQ = 250 mA Aug 26, 2015

Sales Terms

Document Name Date Updated Download
Sales Terms and Conditions
Version: M
Jul 19, 2019

Technical Papers & Articles

Document Name Date Updated Download
6-Port GaN HEMT Models Help Designers Optimize PA Efficiency
Version: Design
by Raymond S. Pengelly, William Pribble, Thomas Smith

This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Oct 12, 2018
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
Version: Design
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Apr 8, 2019
Application of Non Linear Models in a range of challenging GaN HEMT Power Amplifier Designs
Version: Design
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Oct 12, 2018
Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications
Version: Design
by Bradley J. Millon, Simon M. Wood, Raymond S. Pengelly - 2.5 and 5-watt average power (15 and 30-watt peak power) GaN HEMT amplifiers for WiMAX signal protocols have been designed and fabricated for use in the 5.5 to 5.8-GHz band.
Sep 3, 2015
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
Version: Design
by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour.

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Oct 12, 2018
Reliability of GaN/AlGaN HEMT MMIC Technology on 100-mm 4H-SiC
Version: Design
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Apr 8, 2019
Thermal Analysis and its application to High Power GaN HEMT Amplifiers
Version: Design
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Apr 8, 2019
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