CGH55030F1/P1

Peak Output Power		30W
Application		General-Purpose Broadband, 28 V
Average Power (PAVE)		4.0 W @ < 2.0% EVM
Operating Voltage		28 V
Frequency		DC - 6.0 GHz
Package Type		Flange/Pill
Small Signal Gain		10 dB
Efficiency		25 % @ 4 W PAVE
Technology		GaN on SiC

30-W, 5500 – 5800-MHz, 28-V, GaN HEMT
for WiMAX

SKU: CGH55030F1/P1

Wolfspeed’s CGH55030F1/CGH55030P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5 – 5.8-GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 – 5.5-GHz applications as well.

Features:

300 MHz Instantaneous Bandwidth
Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
Designed for Multi-carrier DOCSIS Applications

Documents

Data Sheets

Document Name	Date Updated	Download
CGH55030F1/P1 Version: 3.3	Jan 22, 2019

Line Card

Document Name	Date Updated	Download
RF Line Card	Mar 11, 2020

RF Application Notes

Document Name	Date Updated	Download
GaN HEMT Biasing Circuit with Temperature Compensation Version: B	May 10, 2019
Guide for Soldering Packaged Transistors Version: A	Apr 8, 2019
Indium Mounting Procedure	Apr 25, 2019
Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model Version: A	Jan 21, 2016
Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Version: C	Sep 3, 2015
Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors Version: A	Apr 8, 2019

RF Product Ecology

Document Name	Date Updated	Download
440166 GaN HEMT REACh Declaration CG2H40010F, CGH27015F, CGH27030F, CGH35015F, CGH35030F, CGH40010F, CGH40025F, CGH55015F1, CGH55015F2, CGH55030F1, CGH55030F2, CGHV40030F	Jul 25, 2019
440166 GaN HEMT RoHS Declaration Version: RS4013032018 CG2H40010F, CG2H40025F, CGH27015F, CGH27030F, CGH35015F, CGH35030F, CGH40010F, CGH40025F, CGH55015F1, CGH55015F2, CGH55030F1, CGH55030F2, CGHV40030F	Dec 26, 2018
440196 GaN HEMT REACh Declaration CGH27015P, CGH27030P, CGH35015P, CGH40010P, CGH40025P, CGH55015P1, CGH55015P2, CGH55030P1, CGH55030P2, CGHV40030P	Jul 25, 2019
440196 GaN HEMT RoHS Declaration Version: RS4015052019 CG2H40010P, CG2H40025P, CGH27015P, CGH27030P, CGH35015P, CGH40010P, CGH40025P, CGH55015P1, CGH55015P2, CGH55030P1, CGH55030P2, CGHV40030P	Jul 25, 2019

RF Videos

Document Name	Date Updated	Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture	Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications	Feb 17, 2017

S-parameters

Document Name	Date Updated	Download
CGH55030F1/P1 S-parameters, VDS = 28 V, IDQ = 250 mA	Aug 26, 2015

Sales Terms

Document Name	Date Updated	Download
Sales Terms and Conditions Version: M	Jul 19, 2019

Technical Papers & Articles

Document Name	Date Updated	Download
6-Port GaN HEMT Models Help Designers Optimize PA Efficiency Version: Design by Raymond S. Pengelly, William Pribble, Thomas Smith This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.	Oct 12, 2018
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs Version: Design by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble	Apr 8, 2019
Application of Non Linear Models in a range of challenging GaN HEMT Power Amplifier Designs Version: Design by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.	Oct 12, 2018
Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Version: Design by Bradley J. Millon, Simon M. Wood, Raymond S. Pengelly - 2.5 and 5-watt average power (15 and 30-watt peak power) GaN HEMT amplifiers for WiMAX signal protocols have been designed and fabricated for use in the 5.5 to 5.8-GHz band.	Sep 3, 2015
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies Version: Design by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour. This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.	Oct 12, 2018
Reliability of GaN/AlGaN HEMT MMIC Technology on 100-mm 4H-SiC Version: Design by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.	Apr 8, 2019
Thermal Analysis and its application to High Power GaN HEMT Amplifiers Version: Design by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.	Apr 8, 2019

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CGH55030F1/P1

30-W, 5500 – 5800-MHz, 28-V, GaN HEMT
for WiMAX

Documents

Data Sheets

Line Card

RF Application Notes

RF Product Ecology

RF Videos

S-parameters

Sales Terms

Technical Papers & Articles

Thanks, we’re glad to hear from you.
We’ll route your inquiry to the proper division and they will respond promptly.

Work with Us

CGH55030F1/P1

30-W, 5500 – 5800-MHz, 28-V, GaN HEMT for WiMAX

Documents

Data Sheets

Line Card

RF Application Notes

RF Product Ecology

RF Videos

S-parameters

Sales Terms

Technical Papers & Articles

Thanks, we’re glad to hear from you. We’ll route your inquiry to the proper division and they will respond promptly.

Work with Us

30-W, 5500 – 5800-MHz, 28-V, GaN HEMT
for WiMAX

Thanks, we’re glad to hear from you.
We’ll route your inquiry to the proper division and they will respond promptly.