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CGHV14250

Wolfspeed CGHV14250 250W 1200-1400MHz GaN HEMT
Peak Output Power 250W
Application Radar
Typical Power (PSAT) 330 W
Power Gain 18.2 dB
Frequency 1.2 - 1.4 GHz
Package Type Flange/Pill
Drain Efficiency 77 %
Internal Matching Input matched
Technology GaN on SiC

250-W, 1200 – 1400-MHz, GaN HEMT for L-Band Radar Systems

SKU: CGHV14250

Wolfspeed’s CGHV14250 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 – 1.4-GHz L-Band radar-amplifier applications. The transistor could be utilized for band-specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package.

Features

  • Reference design amplifier 1.2 – 1.4-GHz operation 
  • FET tuning range UHF through 1800 MHz 
  • Internally pre-matched on input, unmatched output

Documents

Data Sheets

Document Name Date Updated Download
CGHV14250
Version: 2.2
Mar 24, 2020

Line Card

Document Name Date Updated Download
RF Line Card Mar 11, 2020

RF Application Notes

Document Name Date Updated Download
Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model
Version: A
Jan 21, 2016

RF Product Ecology

Document Name Date Updated Download
440161 GaN HEMT REACh Declaration
CGHV14250P, CGHV22100P, CGHV22200P, CGHV27100P, CGHV27200P
Jul 25, 2019
440162 GaN HEMT REACh Declaration
CGH21120F, CGH25120F, CGHV14250F, CGHV22100F, CGHV22200F, CGHV27100F, CGHV27200F
Jul 25, 2019
440162 GaN HEMT RoHS Declaration
Version: RS4010092017
CGH21120F, CGH25120F, CGHV14250F, CGHV22100F, CGHV22200F, CGHV27100F, CGHV27200F
Nov 12, 2018
CGHV14250P GaN HEMT RoHS Declaration Oct 13, 2017

RF Videos

Document Name Date Updated Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications Feb 17, 2017

S-parameters

Document Name Date Updated Download
CGHV14250 S-parameters IDQ = 500 mA Aug 26, 2015

Sales Terms

Document Name Date Updated Download
Sales Terms and Conditions
Version: M
Jul 19, 2019

Technical Papers & Articles

Document Name Date Updated Download
6-Port GaN HEMT Models Help Designers Optimize PA Efficiency
Version: Design
by Raymond S. Pengelly, William Pribble, Thomas Smith

This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Oct 12, 2018
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
Version: Design
by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour.

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Oct 12, 2018
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