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Peak Output Power 70W
Application General-Purpose Broadband, 40 V
Typical Power Added Efficiency PAE 60 % @ 10 GHz
Typical Power (PSAT) 70 W
Operating Voltage 40 V
Frequency DC - 18.0 GHz
Package Type Die
Small Signal Gain 17 dB @ 10 GHz

70-W, 18.0-GHz, GaN HEMT Die

SKU: CGHV1J070D


Wolfspeed’s CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.

Features

  • Up to 18 GHz Operation

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