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Wolfspeed CGHV27015S surface mount package
15 W; DC - 6.0 GHz; 50 V; GaN HEMT
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Wolfspeed’s CGHV27015S is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV27015S ideal for LTE; 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT devices are suitable for 3300-3500MHz; 4900-5900MHz; 700-960MHz; 1800-2200MHz; 2500-2700MHz and extended S and C Band applications. The CGHV27015S operates from a 50 volt rail. The transistor is available in a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package.



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Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
Package Type
GaN on SiC
6 GHz
15 W
21 dB
50 V
Packaged Discrete Transistor
Surface Mount
  • 2.4 – 2.7 GHz Operation
  • 15 W Typical Output Power
  • 21 dB Gain at 2.5 W PAVE
  • -38 dBc ACLR at 2.5 W PAVE
  • 32% efficiency at 2.5 W PAVE
  • High degree of APD and DPD correction can be applied
  • LTE; 4G; Telecom and BWA Amplifiers
  • Tactical Communications
  • CATV; UAV data link

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Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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