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CGHV27030

CGHV27030

Wolfspeed CGHV27030S 30 W DC - 6.0 GHz GaN HEMT
30 W; DC - 6.0 GHz; GaN HEMT
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The CGHV27030S is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency; high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz; 1200-1400 MHz; 1800-2200 MHz; 2500-2700 MHz; and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz; including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package.

Product SKU
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV27030S-AMP2
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
NA
28 V
Evaluation Board
Surface Mount
CGHV27030S-AMP3
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
NA
28 V
Evaluation Board
Surface Mount
CGHV27030S-AMP4
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
CGHV27030S
Yes
GaN on SiC
DC
6 GHz
30 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
CGHV27030S-AMP1
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
CGHV27030S-AMP5
Yes
GaN on SiC
1.2 GHz
1.4 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV27030S-AMP2
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
NA
28 V
Evaluation Board
Surface Mount
CGHV27030S-AMP3
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
NA
28 V
Evaluation Board
Surface Mount
CGHV27030S-AMP4
Yes
GaN on SiC
1.8 GHz
2.2 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
CGHV27030S
Yes
GaN on SiC
DC
6 GHz
30 W
21 dB
32%
50 V
Packaged Discrete Transistor
Surface Mount
CGHV27030S-AMP1
Yes
GaN on SiC
2.5 GHz
2.7 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
CGHV27030S-AMP5
Yes
GaN on SiC
1.2 GHz
1.4 GHz
30 W
21 dB
NA
50 V
Evaluation Board
Surface Mount
Features
  • 2.5 – 2.7 GHz Operation
  • 30 W Typical Output Power
  • 20 dB Gain at 5 W PAVE
  • -34 dBc ACLR at 5 W PAVE
  • 30% efficiency at 5 W PAVE
  • High degree of APD and DPD correction can be applied
Applications
  • Cellular Infrastructure
  • Tactical Communications
  • L-Band Radar
  • S-Band Radar
Apply Filters
Document Type
Document Name
Application Notes
Application Notes
Data Sheets
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Ecology
CGH27030S – CGH40006S – CGHV1F006S – CGHV1F025S – CGHV27015S – CGHV27030S
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Data Sheets
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Ecology
CGH27030S – CGH40006S – CGHV1F006S – CGHV1F025S – CGHV27015S – CGHV27030S
Product Catalog
Sales Terms
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