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Peak Output Power 30W
Application 50-V Telecom
Typical Power (PSAT) 30 W
Operating Voltage 50 V
Frequency DC - 6.0 GHz
Package Type Surface Mount
Efficiency 32 % @ 5 W PAVE
Gain 21 dB @ 5 W PAVE
ACLR -36 dBc @ 5 W PAVE

30 W, DC - 6.0 GHz, GaN HEMT

SKU: CGHV27030S


The CGHV27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

Features for 50 V in CGHV27030S-TB1

  • 2.5 - 2.7 GHz Operation
  • High degree of APD and DPD correction can be applied

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