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CGHV31500

500W, 2.7 - 3.1 GHz, GaN IMFET
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The CGHV31500F1 is a gallium-nitride (GaN), fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle.

CGHV31500

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV31500F-AMP
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
12.75 dB
60%
50 V
Evaluation Board
Flange
CGHV31500F
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
12.75 dB
60%
50 V
Packaged Discrete Transistor
Flange
CGHV31500F1
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
13 dB
>65%
50 V
Packaged Discrete Transistor
Flange
CGHV31500F1-AMP
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
13 dB
>65%
50 V
Evaluation Board
Flange
Features
  • 2.7 – 3.1 GHz Operation
  • 650 W Typical Output Power
  • 12 dB Power Gain
  • 65% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop
Applications
  • S-Band Radar amplifiers

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Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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