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CGHV31500

CGHV31500

cghv31500f_med_1
500-W; 2700 to 3100-MHz; 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems
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Wolfspeed’s CGHV31500F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGHV31500F ideal for 2.7 – 3.1-GHz s-band radar-amplifier applications. The transistor is supplied in a ceramic/metal-flange package; type 440217.

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV31500F
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
12.75 dB
60%
50 V
Packaged Discrete Transistor
Flange
CGHV31500F-AMP
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
12.75 dB
NA
50 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV31500F
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
12.75 dB
60%
50 V
Packaged Discrete Transistor
Flange
CGHV31500F-AMP
Yes
GaN on SiC
2.7 GHz
3.1 GHz
500 W
12.75 dB
NA
50 V
Evaluation Board
Flange
Features
  • 2.7 – 3.1 GHz Operation
  • 650 W Typical Output Power
  • 12 dB Power Gain
  • 65% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop
Applications
  • S-Band Radar amplifiers
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Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Data Sheets
S-parameters
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Catalog
Sales Terms
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