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CGHV31500F

Wolfspeed GaN HEMT for S-Band Radar Systems | Wolfspeed RF Amplifiers
Peak Output Power 500W
Application Radar
Typical Power (PSAT) 600 W
Power Gain 12.75 dB
Frequency 2.7 - 3.1 GHz
Drain Efficiency 60 %
Internal Matching Yes - 50Ω

500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems

SKU: CGHV31500F

Wolfspeed’s CGHV31500F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 – 3.1-GHz s-band radar-amplifier applications. The transistor is supplied in a ceramic/metal-flange package, type 440217.

Documents

Data Sheets

Document Name Date Updated Download
CGHV31500F
Version: 3
Jul 31, 2018

Line Card

Document Name Date Updated Download
RF Line Card Oct 10, 2019

RF Application Notes

Document Name Date Updated Download
Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model
Version: A
Jan 21, 2016

RF Product Ecology

Document Name Date Updated Download
CGHV31500 GaN HEMT RoHS Declaration
Version: RS4013092016
Sep 16, 2016
CGHV31500F GaN HEMT RoHS Declaration
Version: RS4058052017
Aug 7, 2017

RF Videos

Document Name Date Updated Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications Feb 17, 2017

Sales Terms

Document Name Date Updated Download
Sales Terms and Conditions
Version: M
Jul 19, 2019

Technical Papers & Articles

Document Name Date Updated Download
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
Version: Design
by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour.

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Oct 12, 2018
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