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CGHV31500F

Wolfspeed GaN HEMT for S-Band Radar Systems | Wolfspeed RF Amplifiers
Peak Output Power 500W
Application L-Band / S-Band / X-Band / C-Band / Ku-Band
Typical Power (PSAT) 600 W
Power Gain 12.75 dB
Frequency 2.7 - 3.1 GHz
Drain Efficiency 60 %
Internal Matching Yes - 50Ω

500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems

SKU: CGHV31500F

Wolfspeed’s CGHV31500F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 – 3.1-GHz s-band radar-amplifier applications. The transistor is supplied in a ceramic/metal-flange package, type 440217.

Documents

Data Sheets

Document Name Date Updated Download
CGHV31500F
Version: 3
Jul 31, 2018

RF Application Notes

Document Name Date Updated Download
Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model
Version: A
Jan 21, 2016

RF Product Ecology

Document Name Date Updated Download
CGHV31500 GaN HEMT RoHS Declaration
Version: RS4013092016
Sep 16, 2016
CGHV31500F GaN HEMT RoHS Declaration
Version: RS4058052017
Aug 7, 2017

RF Videos

Document Name Date Updated Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications Feb 17, 2017

Sales Terms

Document Name Date Updated Download
Sales Terms and Conditions
Version: M
Nov 12, 2018

Technical Papers & Articles

Document Name Date Updated Download
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
Version: Design
by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour.

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Oct 12, 2018