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Wolfspeed CGHV35060MP surface mount package
60-W; 2700 to 3800-MHz; 50-V; GaN HEMT for S-Band Radar and LTE Base Stations
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Wolfspeed’s CGHV35060MP is a 60-W input-matched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1 to 3.8 GHz while the input-matched transistor provides optimal gain; power and efficiency in a small 6.5-mm x 4.4-mm plastic surface-mount (SMT) package. The typical performance plots in the data sheet are derived with CGHV35060MP matched into a 3.1 to 3.8-GHz high-power amplifier.



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Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
Package Type
GaN on SiC
2.7 GHz
3.8 GHz
60 W
14.5 dB
50 V
Packaged Discrete Transistor
  • 75W Typical output power
  • 14.5 dB power gain
  • 67% Drain efficiency
  • Internally pre-matched on input; unmatched output
  • S-Band Amplifiers

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by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Aerospace & Defense

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