Features
- 75W Typical output power
- 14.5 dB power gain
- 67% Drain efficiency
- Internally pre-matched on input; unmatched output
Product SKU | Buy Online | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
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CGHV35060MP | Yes | GaN on SiC | 2.7 GHz | 3.8 GHz | 60 W | 14.5 dB | 67% | 50 V | Packaged Discrete Transistor | Plastic |
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Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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