Features
- 75W Typical output power
- 14.5 dB power gain
- 67% Drain efficiency
- Internally pre-matched on input; unmatched output
CGHV35060MP
60-W; 2700 to 3800-MHz; 50-V; GaN HEMT for S-Band Radar and LTE Base Stations
Wolfspeed’s CGHV35060MP is a 60-W input-matched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1 to 3.8 GHz while the input-matched transistor provides optimal gain; power and efficiency in a small 6.5-mm x 4.4-mm plastic surface-mount (SMT) package. The typical performance plots in the data sheet are derived with CGHV35060MP matched into a 3.1 to 3.8-GHz high-power amplifier.
Products
CGHV35060MP
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CGHV35060MP
Product SKU | Buy Online | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV35060MP | Yes | GaN on SiC | 2.7 GHz | 3.8 GHz | 60 W | 14.5 dB | 67% | 50 V | Packaged Discrete Transistor | Plastic |
Applications
- S-Band Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Design Files | |
| Data Sheets | |
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
| Sales Terms |
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