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Peak Output Power 120W
Application Radar
Power Gain 12.8 dB @ TCASE =85°C
Frequency 3.1 - 3.5 GHz
Package Type Flange
Drain Efficiency 62% @ TCASE =85°C
Internal Matching Input matched
Technology GaN on SiC

120-W, 3100 – 3500-MHz, 50 V, GaN HEMT for S-Band Radar Systems


Wolfspeed’s CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CGHV35120F ideal for 3.1 - 3.5 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.


  • Rated power = 120 W @ TCASE = 85°C
  • Drain Efficiency = 62% @ TCASE = 85°C
  • Transient 100 μsec – 300 μsec @ 20% duty cycle
  • Internally pre-matched on input, unmatched output



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