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Wolfspeed CGHV35120F
120-W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems

Wolfspeed’s CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CGHV35120F ideal for 2.9 – 3.8 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.


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Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
Package Type
GaN on SiC
3.1 GHz
3.5 GHz
120 W
12.8 dB
50 V
Packaged Discrete Transistor
  • Rated Power = 120 W @ TCASE = 85°C
  • Operating Frequency = 2.9 – 3.8 GHz
  • Transient 100 μsec – 300 μsec @ 20% Duty Cycle
  • 13 dB Power Gain @ TCASE = 85°C
  • 62% Typical Drain Efficiency @ TCASE = 85°C
  • Input Matched
  • <0.3 dB Pulsed Amplitude Droop
  • S-Band Radar Amplifiers


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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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