Features
- Rated Power = 120 W @ TCASE = 85°C
- Operating Frequency = 2.9 – 3.8 GHz
- Transient 100 μsec – 300 μsec @ 20% Duty Cycle
- 13 dB Power Gain @ TCASE = 85°C
- 62% Typical Drain Efficiency @ TCASE = 85°C
- Input Matched
- <0.3 dB Pulsed Amplitude Droop
Product SKU | Buy Online | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
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CGHV35120F | Yes | GaN on SiC | 3.1 GHz | 3.5 GHz | 120 W | 12.8 dB | 62% | 50 V | Packaged Discrete Transistor | Flange |
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Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Product Catalog | |
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