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Peak Output Power 400W
Application Radar
Power Gain 10.5 dB
Operating Voltage 50 V
Frequency 2.9 - 3.5 GHz
Package Type Flange/Pill
Drain Efficiency 60 %
Internal Matching Yes - 50Ω
Technology GaN on SiC

400-W, 2900 – 3500-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems


Wolfspeed’s CGHV35400F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 – 3.5-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440210.



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