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Peak Output Power 550W
Application Radar
Power Gain 14 dB
Operating Voltage 48 V
Frequency 3.3 - 3.7 GHz
Package Type Flange
Drain Efficiency 55 %
Internal Matching Yes - 50Ω
Technology GaN on SiC

400-W, 3300 – 3700-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems


Cree’s CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.3 - 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV37400 is based on Cree’s high power density 50 V, 0.4 µm GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package.



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