Skip to Main Content
  • English
  • 简体中文
  • 繁體中文
View Cart


Wolfspeed RF CGHV37400F flange package
400-W; 3300 – 3700-MHz; 50-Ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems
NOTE: Not recommended for new designs. CGHV38375F is the recommended replacement.
Wolfspeed’s CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV37400F ideal for 3.3 - 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV37400 is based on Wolfspeed’s high power density 50 V; 0.4 µm GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package.



No filters selected, showing all 1 products


Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Recommended For New Design?
Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
Package Type
GaN on SiC
3.3 GHz
3.7 GHz
550 W
14 dB
48 V
Packaged Discrete Transistor
  • 3.3 – 3.8 GHz Operation
  • 525 W Typical Output Power
  • 11.5 dB Power Gain
  • 55% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop
  • S-Band Radar Amplifiers

Documents, Tools & Support


Document Type
Document Name
Design Files
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Catalog
Sales Terms
Buy OnlineFind a Distributor

Knowledge Center

View All
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading  Technical Articles

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading  Technical Articles


Wolfspeed Logo

Social Media

  • Facebook
  • Instagram
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.