Contact
中文
Home
CGHV38375F

CGHV38375F

cghv38375f
2.75 - 3.75, 400W GaN on SiC HPA

Wolfspeed’s CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input and output ports. The CGHV38375F operates from 2.75 – 3.75 GHz providing coverage over the entire S-band radar band. This high-power amplifier provides >10 dB of large signal gain and 40% power-added efficiency and is ideally suited as a high-power building block supporting both pulsed and CW radar applications.

 

Product SKU
Buy Online
Data Sheet
Request Sample
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Form
Package Type
Recommended For New Design?
CGHV38375F
GaN on SiC
2.75 GHz
3.75 GHz
400 W
>10 dB
Packaged Discrete Transistor
Flange
Yes
Product SKU
Buy Online
Data Sheet
Request Sample
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Form
Package Type
Recommended For New Design?
CGHV38375F
GaN on SiC
2.75 GHz
3.75 GHz
400 W
>10 dB
Packaged Discrete Transistor
Flange
Yes
Features
  • Full S-band radar coverage
  • 400 W Typical PSAT
  • 55% Typical Drain Efficiency
  • >10 dB Large Signal Gain
  • Pulsed and CW Operation
Applications
  • Civil and Military, Pulsed and CW S-band Radar
Apply Filters
Document Type
Document Name
Data Sheets
Design Files
S-parameters
Product Catalog
Sales Terms
Document Type
Document Name
Data Sheets
Design Files
S-parameters
Product Catalog
Sales Terms
Need information?
Ready to buy?
Find a Distributor
Want to keep in touch?

Knowledge Center

View All
highpower_wideband_lband_image
GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
Register Now 
 Webinars
RF PA 101_amplifier classes image
GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
Continue Reading 
 Technical Articles
xband-hero-image
GaN on SiC

Integrated Expertise Delivers the Best GaN Solutions for X-Band PAs

Gallium nitride is the undisputed technology for achieving high-efficiency operation in high-frequency applications, such as those at X-band (8–12 GHz). But device selection for X-band applications doesn’t end with choosing the material technology, because turning the bulk material characteristics into high-performance GaN on SiC devices is quite another matter.
Continue Reading 
 Technical Articles
Cree Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2021 Cree Wolfspeed