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CGHV38375F

2.75 - 3.75, 400W GaN on SiC HPA

Wolfspeed’s CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input and output ports. The CGHV38375F operates from 2.75 – 3.75 GHz providing coverage over the entire S-band radar band. This high-power amplifier provides >10 dB of large signal gain and 40% power-added efficiency and is ideally suited as a high-power building block supporting both pulsed and CW radar applications.

 

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CGHV38375F
Yes
GaN on SiC
2.75 GHz
3.75 GHz
400 W
>10 dB
55%
50 V
Packaged Discrete Transistor
Flange
Features
  • Full S-band radar coverage
  • 400 W Typical PSAT
  • 55% Typical Drain Efficiency
  • >10 dB Large Signal Gain
  • Pulsed and CW Operation
Applications
  • Civil and Military, Pulsed and CW S-band Radar
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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 Technical Articles

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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 Technical Articles

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