Features
- Up to 3 GHz Operation
- 100 W Typical Output Power
- 17.5 dB Small Signal Gain at 2.0 GHz
- Application Circuit for 0.5 – 2.5 GHz
- 55% Efficiency at PSAT
- 50 V Operation
CGHV40100
100-W; DC CGHV40100 3-GHz; 50-V; GaN HEMT
Wolfspeed’s CGHV40100 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40100; operating from a 50-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGHV40100 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package.
Products
CGHV40100
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CGHV40100
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV40100P | Yes | GaN on SiC | DC | 3 GHz | 100 W | 17.5 dB | 55% | 50 V | Packaged Discrete Transistor | Pill | ||||
CGHV40100P-AMP | Yes | GaN on SiC | 0.5 GHz | 2.5 GHz | 100 W | 17.5 dB | 55% | 50 V | Evaluation Board | Pill | ||||
CGHV40100F-AMP | Yes | GaN on SiC | 0.5 GHz | 2.5 GHz | 100 W | 17.5 dB | 55% | 50 V | Evaluation Board | Flange | ||||
CGHV40100F | Yes | GaN on SiC | DC | 3 GHz | 100 W | 17.5 dB | 55% | 50 V | Packaged Discrete Transistor | Flange |
Applications
- Linear and compressed amplifier circuits
Documents, Tools & Support
- Technical & Sales Documents
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Documents
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| Design Files | |
| Design Files | |
| Design Files | |
| Application Notes | |
| Application Notes | |
| Application Notes | Operating at 50 V and 100 W
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| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center
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