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Peak Output Power 200W
Application General-Purpose Broadband, 50 V
Typical Power (PSAT) 250 W (CW)
Operating Voltage 28 V / 50 V
Frequency DC - 2.0 GHz
Package Type Flange and Pill
Small Signal Gain 24 dB
Drain Efficiency 70%

180-W, DC - 2 GHz, GaN HEMT

SKU: CGHV40180


Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance.

FEATURES: 

  • Input Matched
  • 180 W (CW) Minimum Pout
  • 250 W Typical Pout
  • 24 dB Typical Small Signal Gain
  • 28 V and 50 V Operation

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