Features
- 4.4 – 5.0 GHz Operation
- 180 W Typical PSAT
- 11.5 dB Typical Power Gain
- 48% Typical Power Efficiency
- 50 Ohm Internally Matched
CGHV50200
200-W; 4400 - 5000-MHz; 50-Ohm Input/Output-Matched; GaN HEMT
Wolfspeed’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV50200F ideal for troposcatter communications; 4.4 – 5.0-GHz C-Band SatCom applications and beyond line of sight. The transistor is supplied in a ceramic/metal flange package; type 440215.
Products
CGHV50200
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CGHV50200
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV50200F | Yes | GaN on SiC | 4.4 GHz | 5 GHz | 200 W | 11.5 dB | 33% | 40 V | Packaged Discrete Transistor | Flange | ||||
CGHV50200F-AMP | Yes | GaN on SiC | 4.4 GHz | 5 GHz | 200 W | 11.5 dB | 33% | 40 V | Evaluation Board | Flange |
Applications
- Troposcatter Communications
- Beyond Line of Sight – BLOS
- Satellite Communications
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
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Document Type | Document Name |
|---|---|
| Design Files | |
| Application Notes | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
| Sales Terms |
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