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CGHV50200

CGHV50200

200-W; 4400 - 5000-MHz; 50-Ohm Input/Output-Matched; GaN HEMT
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Wolfspeed’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV50200F ideal for troposcatter communications; 4.4 – 5.0-GHz C-Band SatCom applications and beyond line of sight. The transistor is supplied in a ceramic/metal flange package; type 440215.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV50200F
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
33%
40 V
Packaged Discrete Transistor
Flange
CGHV50200F-AMP
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
NA
40 V
Evaluation Board
Flange
Features
  • 4.4 – 5.0 GHz Operation
  • 180 W Typical PSAT
  • 11.5 dB Typical Power Gain
  • 48% Typical Power Efficiency
  • 50 Ohm Internally Matched
Applications
  • Troposcatter Communications
  • Beyond Line of Sight – BLOS
  • Satellite Communications
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Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

RF
|
Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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